Wallace J B, Bayu Aji L B, Shao L, Kucheyev S O
Lawrence Livermore National Laboratory, Livermore, California, 94550, USA.
Department of Nuclear Engineering, Texas A&M University, College Station, Texas, 77843, USA.
Sci Rep. 2019 Aug 26;9(1):12377. doi: 10.1038/s41598-019-48415-7.
The effect of pre-existing lattice defects on radiation defect dynamics in solids remains unexplored. Here, we use a pulsed beam method to measure the time constant of defect relaxation for 500 keV Ar ion bombardment of Si at 100 °C with the following two representative types of pre- existing lattice disorder: (i) point defect clusters and (ii) so-called "clamshell" defects consisting of a high density of dislocations. Results show that point defect clusters slow down defect relaxation processes, while regions with dislocations exhibit faster defect interaction dynamics. These experimental observations demonstrate that the dynamic aspects of damage buildup, attributed to defect trapping-detrapping processes, can be controlled by defect engineering.
预先存在的晶格缺陷对固体中辐射缺陷动力学的影响尚未得到研究。在此，我们使用脉冲束方法来测量在100°C下500 keV氩离子轰击硅时缺陷弛豫的时间常数，其中存在以下两种具有代表性的预先存在的晶格无序类型：(i) 点缺陷簇和 (ii) 由高密度位错组成的所谓“蛤壳”缺陷。结果表明，点缺陷簇减缓了缺陷弛豫过程，而位错区域表现出更快的缺陷相互作用动力学。这些实验观察结果表明，归因于缺陷捕获-脱捕过程的损伤积累的动态方面可以通过缺陷工程来控制。
