Lawrence Livermore National Laboratory, Livermore, California 94550, USA.
Department of Nuclear Engineering, Texas A&M University, College Station, Texas 77843, USA.
Sci Rep. 2017 Mar 17;7:44703. doi: 10.1038/srep44703.
Effects of the collision cascade density on radiation damage in SiC remain poorly understood. Here, we study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. We find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. These results demonstrate clearly (and quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.
碰撞级联密度对碳化硅辐射损伤的影响仍不清楚。在这里，我们研究了在 100°C 下用连续或脉冲的 500keV Ne、Ar、Kr 或 Xe 离子束辐照的 3C-SiC 中损伤的积累和缺陷相互作用动力学。我们发现，用产生更密集碰撞级联的重离子进行辐照，会降低动态退火效率，并增加非晶化截面常数和动态退火的时间常数。这些参数的级联密度行为是非线性的，似乎没有相关性。这些结果清楚地（定量地）表明了碰撞级联密度在 3C-SiC 中动态辐射缺陷过程中的重要作用。
