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基于无机CZT和InCZT单晶的高性能可见光光电探测器。

High-performance visible light photodetectors based on inorganic CZT and InCZT single crystals.

作者信息

Shkir Mohd, Khan Mohd Taukeer, Ashraf I M, Almohammedi Abdullah, Dieguez E, AlFaify S

机构信息

Advanced Functional Materials and Optoelectronics Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia.

Department of Physics, Faculty of Science, Islamic University of Madinah, Madinah, 42351, Saudi Arabia.

出版信息

Sci Rep. 2019 Aug 27;9(1):12436. doi: 10.1038/s41598-019-48621-3.

DOI:10.1038/s41598-019-48621-3
PMID:31455774
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6711974/
Abstract

Herein, the optoelectrical investigation of cadmium zinc telluride (CZT) and indium (In) doped CZT (InCZT) single crystals-based photodetectors have been demonstrated. The grown crystals were configured into photodetector devices and recorded the current-voltage (I-V) and current-time (I-t) characteristics under different illumination intensities. It has been observed that the photocurrent generation mechanism in both photodetector devices is dominantly driven by a photogating effect. The CZT photodetector exhibits stable and reversible device performances to 632 nm light, including a promotable responsivity of 0.38 AW, a high photoswitch ratio of 152, specific detectivity of 6.30 × 10 Jones, and fast switching time (rise time of 210 ms and decay time of 150 ms). When doped with In, the responsivity of device increases to 0.50 AW, photoswitch ratio decrease to 10, specific detectivity decrease to 1.80 × 10 Jones, rise time decrease to 140 ms and decay time increase to 200 ms. Moreover, these devices show a very high external quantum efficiency of 200% for CZT and 250% for InCZT. These results demonstrate that the CZT based crystals have great potential for visible light photodetector applications.

摘要

在此,已经展示了基于碲化镉锌(CZT)和铟(In)掺杂的CZT(InCZT)单晶的光电探测器的光电研究。将生长的晶体配置成光电探测器器件,并记录了不同光照强度下的电流-电压(I-V)和电流-时间(I-t)特性。据观察,两种光电探测器器件中的光电流产生机制主要由光门控效应驱动。CZT光电探测器对632nm光表现出稳定且可逆的器件性能,包括可促进的0.38 AW响应度、152的高光开关比、6.30×10琼斯的比探测率以及快速开关时间(上升时间为210ms,衰减时间为150ms)。当掺杂In时,器件的响应度增加到0.50 AW,光开关比降低到10,比探测率降低到1.80×10琼斯,上升时间降低到140ms,衰减时间增加到200ms。此外,这些器件对于CZT显示出200%的非常高的外量子效率,对于InCZT显示出250%的外量子效率。这些结果表明,基于CZT的晶体在可见光光电探测器应用方面具有巨大潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/92313a42ccde/41598_2019_48621_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/5ee02a5b40ee/41598_2019_48621_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/1a7b3baddf2e/41598_2019_48621_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/c6dbd07acc6c/41598_2019_48621_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/8469c3f4e72b/41598_2019_48621_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/88dc1dffc483/41598_2019_48621_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/d18dec0dbf79/41598_2019_48621_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/92313a42ccde/41598_2019_48621_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/5ee02a5b40ee/41598_2019_48621_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/1a7b3baddf2e/41598_2019_48621_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/c6dbd07acc6c/41598_2019_48621_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/8469c3f4e72b/41598_2019_48621_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/88dc1dffc483/41598_2019_48621_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/d18dec0dbf79/41598_2019_48621_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/629d/6711974/92313a42ccde/41598_2019_48621_Fig7_HTML.jpg

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