He Qiyuan, Lin Zhaoyang, Ding Mengning, Yin Anxiang, Halim Udayabagya, Wang Chen, Liu Yuan, Cheng Hung-Chieh, Huang Yu, Duan Xiangfeng
Nano Lett. 2019 Oct 9;19(10):6819-6826. doi: 10.1021/acs.nanolett.9b01898. Epub 2019 Sep 9.
The electrochemical molecular intercalation of two-dimensional layered materials (2DLMs) produces stable and highly tunable superlattices between monolayer 2DLMs and self-assembled molecular layers. This process allows unprecedented flexibility in integrating highly distinct materials with atomic/molecular precision to produce a new generation of organic/inorganic superlattices with tunable chemical, electronic, and optical properties. To better understand the intercalation process, we developed an on-chip platform based on MoS model devices and used optical, electrochemical, and in situ electronic characterizations to resolve the intermediate stages during the intercalation process and monitor the evolution of the molecular superlattices. With sufficient charge injection, the organic cetyltrimethylammonium bromide (CTAB) intercalation induces the phase transition of MoS from semiconducting 2H phase to semimetallic 1T phase, resulting in a dramatic increase of electrical conductivity. Therefore, in situ monitoring the evolution of the device conductance reveals the electrochemical intercalation dynamics with an abrupt conductivity change, signifying the onset of the molecule intercalation. In contrast, the intercalation of tetraheptylammonium bromide (THAB), a branched molecule in a larger size, resulting in a much smaller number of charges injected to avoid the 2H to 1T phase transition. Our study demonstrates a powerful platform for in situ monitoring the molecular intercalation of many 2DLMs (MoS, WSe, ReS, PdSe, TiS, and graphene) and systematically probing electronic, optical, and optoelectronic properties at the single-nanosheet level.
二维层状材料(2DLMs)的电化学分子插层在单层2DLMs与自组装分子层之间产生稳定且高度可调的超晶格。这一过程为以原子/分子精度整合高度不同的材料提供了前所未有的灵活性,从而生产出具有可调化学、电子和光学性质的新一代有机/无机超晶格。为了更好地理解插层过程,我们基于MoS模型器件开发了一个片上平台,并利用光学、电化学和原位电子表征来解析插层过程中的中间阶段,并监测分子超晶格的演变。通过足够的电荷注入,有机十六烷基三甲基溴化铵(CTAB)插层诱导MoS从半导体2H相转变为半金属1T相,导致电导率急剧增加。因此,原位监测器件电导的演变揭示了具有突然电导率变化的电化学插层动力学,这标志着分子插层的开始。相比之下,较大尺寸的支链分子四庚基溴化铵(THAB)的插层导致注入的电荷量少得多,从而避免了2H相向1T相的转变。我们的研究展示了一个强大的平台,用于原位监测许多2DLMs(MoS、WSe、ReS、PdSe、TiS和石墨烯)的分子插层,并在单纳米片水平上系统地探测电子、光学和光电性质。