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基于三腔耦合光子晶体传感器的折射率和温度同时传感

Simultaneous sensing of refractive index and temperature based on a three-cavity-coupling photonic crystal sensor.

作者信息

Wang Zheng, Fu ZhongYuan, Sun FuJun, Wang Chao, Zhou Jian, Tian HuiPing

出版信息

Opt Express. 2019 Sep 16;27(19):26471-26482. doi: 10.1364/OE.27.026471.

Abstract

Healthcare and biosensing have attracted wide attention worldwide, with the development of chip integration technology in recent decades. In terms of compact sensor design with high performance and high accuracy, photonic crystal structures based on Fano resonance offer superior solutions. Here, we design a photonic crystal structure for sensing applications by proposing modeling for a three-cavity-coupling system and derive the transmission expression based on temporal coupled-mode theory (TCMT). The correlations between the structural parameters and the transmission are discussed. Ultimately, the geometry, composed of an air mode cavity, a dielectric mode cavity and a cavity of wide linewidth, is proved to be feasible for simultaneous sensing of refractive index (RI) and temperature (T). For the air mode cavity, the RI and T sensitivities are 523 nm/RIU and 2.5 pm/K, respectively. For the dielectric mode cavity, the RI and T sensitivities are 145 nm/RIU and 60.0 pm/K, respectively. The total footprint of the geometry is only 14 × 2.6 (length × width) µm. Moreover, the deviation ratios of the proposed sensor are approximately 0.6% and 0.4% for RI and T, respectively. Compared with the researches lately published, the sensor exhibits compact footprint and high accuracy. Therefore, we believe the proposed sensor will contribute to the future compact lab-on-chip detection system design.

摘要

近几十年来,随着芯片集成技术的发展,医疗保健和生物传感在全球范围内引起了广泛关注。在高性能和高精度的紧凑型传感器设计方面,基于法诺共振的光子晶体结构提供了卓越的解决方案。在此,我们通过对三腔耦合系统进行建模,设计了一种用于传感应用的光子晶体结构,并基于时间耦合模理论(TCMT)推导了传输表达式。讨论了结构参数与传输之间的相关性。最终,由空气模式腔、介电模式腔和宽带宽腔组成的几何结构被证明对于同时传感折射率(RI)和温度(T)是可行的。对于空气模式腔,RI和T灵敏度分别为523 nm/RIU和2.5 pm/K。对于介电模式腔,RI和T灵敏度分别为145 nm/RIU和60.0 pm/K。该几何结构的总面积仅为14×2.6(长×宽)µm。此外,所提出传感器的偏差率对于RI和T分别约为0.6%和0.4%。与最近发表的研究相比,该传感器具有紧凑的尺寸和高精度。因此,我们相信所提出的传感器将有助于未来紧凑型芯片实验室检测系统的设计。

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