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优化用于高性能超导纳米线单光子探测器的超薄NbTiN薄膜的化学计量比。

Optimizing the stoichiometry of ultrathin NbTiN films for high-performance superconducting nanowire single-photon detectors.

作者信息

Zichi Julien, Chang Jin, Steinhauer Stephan, von Fieandt Kristina, Los Johannes W N, Visser Gijs, Kalhor Nima, Lettner Thomas, Elshaari Ali W, Zadeh Iman Esmaeil, Zwiller Val

出版信息

Opt Express. 2019 Sep 16;27(19):26579-26587. doi: 10.1364/OE.27.026579.

Abstract

The requirements in quantum optics experiments for high single-photon detection efficiency, low timing jitter, low dark count rate and short dead time have been fulfilled with the development of superconducting nanowire single-photon detectors. Although they offer a detection efficiency above 90%, achieving a high time resolution in devices made of amorphous materials is a challenge, particularly at temperatures above 0.8 K. Devices made from niobium nitride and niobium titanium nitride allow us to reach the best timing jitter but, in turn, have stronger requirements in terms of film quality to achieve a high efficiency. Here we take advantage of the flexibility of reactive co-sputter deposition to tailor the composition of NbTiN superconducting films and show that a Nb fraction of x = 0.62 allows for the fabrication of detectors from films as thick as 9 nm and covering an active area of 20 µm, with a wide detection saturation plateau at telecom wavelengths and in particular at 1550 nm. This is a signature of an internal detection efficiency saturation, achieved while maintaining the high time resolution associated with NbTiN and operation at 2.5K. With our optimized recipe, we reliably fabricated detectors with high critical current densities reaching a saturation plateau at 1550 nm with 80% system detection efficiency and with a FWHM timing jitter as low as 19.5 ps.

摘要

随着超导纳米线单光子探测器的发展,量子光学实验中对高单光子探测效率、低定时抖动、低暗计数率和短死时间的要求已得到满足。尽管它们的探测效率超过90%,但在由非晶材料制成的器件中实现高时间分辨率是一项挑战,尤其是在温度高于0.8K时。由氮化铌和氮化钛铌制成的器件使我们能够达到最佳定时抖动,但反过来,在实现高效率方面对薄膜质量有更强的要求。在这里,我们利用反应性共溅射沉积的灵活性来调整NbTiN超导薄膜的成分,并表明x = 0.62的Nb含量允许制造厚度达9nm且覆盖20μm有源区的探测器,在电信波长尤其是1550nm处具有宽探测饱和平台。这是内部探测效率饱和的标志,在保持与NbTiN相关的高时间分辨率并在2.5K下运行时实现。通过我们优化的配方,我们可靠地制造出具有高临界电流密度的探测器,在1550nm处达到饱和平台,系统探测效率为80%,半高宽定时抖动低至19.5ps。

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