Hajtó Dániel, Rák Ádám, Cserey György
Faculty of Information Technology and Bionics, Pázmány Péter Catholic University, 1083 Budapest, Hungary.
StreamNovation Ltd., 1083 Budapest, Hungary.
Materials (Basel). 2019 Oct 31;12(21):3573. doi: 10.3390/ma12213573.
One of the main obstacles for memristors to become commonly used in electrical engineering and in the field of artificial intelligence is the unreliability of physical implementations. A non-uniform range of resistance, low mass-production yield and high fault probability during operation are disadvantages of the current memristor technologies. In this article, the authors offer a solution for these problems with a circuit design, which consists of many memristors with a high operational variance that can form a more robust single memristor. The proposition is confirmed by physical device measurements, by gaining similar results as in previous simulations. These results can lead to more stable devices, which are a necessity for neuromorphic computation, artificial intelligence and neural network applications.
忆阻器在电气工程和人工智能领域得到广泛应用的主要障碍之一是物理实现的不可靠性。当前忆阻器技术存在电阻范围不均匀、大规模生产成品率低以及运行期间故障概率高等缺点。在本文中,作者通过一种电路设计为这些问题提供了一个解决方案,该电路设计由许多具有高运行方差的忆阻器组成,这些忆阻器可以形成一个更稳健的单个忆阻器。通过物理器件测量证实了这一命题,获得了与先前模拟相似的结果。这些结果可以带来更稳定的器件,这对于神经形态计算、人工智能和神经网络应用来说是必不可少的。