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忆阻器和分数阶元件的多维缩放轨迹。

Multidimensional scaling locus of memristor and fractional order elements.

作者信息

Tenreiro Machado J A, Lopes António M

机构信息

Institute of Engineering, Polytechnic of Porto, Dept. of Electrical Engineering, Porto, Portugal.

UISPA-LAETA/INEGI, Faculty of Engineering, University of Porto, Porto, Portugal.

出版信息

J Adv Res. 2020 Jan 20;25:147-157. doi: 10.1016/j.jare.2020.01.004. eCollection 2020 Sep.

DOI:10.1016/j.jare.2020.01.004
PMID:32922982
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7474200/
Abstract

This paper combines the synergies of three mathematical and computational generalizations. The concepts of fractional calculus, memristor and information visualization extend the classical ideas of integro-differential calculus, electrical elements and data representation, respectively. The study embeds these notions in a common framework, with the objective of organizing and describing the "continuum" of fractional order elements (FOE). Each FOE is characterized by its behavior, either in the time or in the frequency domains, and the differences between the FOE are captured by a variety of distinct indices, such as the Arccosine, Canberra, Jaccard and Sørensen distances. The dissimilarity information is processed by the multidimensional scaling (MDS) computational algorithm to unravel possible clusters and to allow a direct pattern visualization. The MDS yields 3-dimensional loci organized according to the FOE characteristics both for linear and nonlinear elements. The new representation generalizes the standard Cartesian 2-dimensional periodic table of elements.

摘要

本文结合了三种数学和计算泛化方法的协同作用。分数阶微积分、忆阻器和信息可视化的概念分别扩展了积分微分学、电气元件和数据表示的经典概念。该研究将这些概念嵌入到一个通用框架中,目的是组织和描述分数阶元件(FOE)的“连续统”。每个FOE都由其在时域或频域中的行为来表征,并且FOE之间的差异通过各种不同的指标来体现,如反余弦、堪培拉、杰卡德和索伦森距离。通过多维缩放(MDS)计算算法处理相异信息,以揭示可能的聚类并实现直接的模式可视化。MDS针对线性和非线性元件,根据FOE特性生成三维轨迹。这种新的表示方法推广了标准的笛卡尔二维元素周期表。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/9b7eb7866461/gr10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/557034d5a439/ga1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/0101d4797c4f/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/cb9eb50b6ab0/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/077052384b1d/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/7a7ca33d0914/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/3dc536f5470d/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/a4afd5cab314/gr6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/f03f87e002d6/gr7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/7c5c7fcaf181/gr8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/b4888579b144/gr9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/9b7eb7866461/gr10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/557034d5a439/ga1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/0101d4797c4f/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/cb9eb50b6ab0/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/077052384b1d/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/7a7ca33d0914/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/3dc536f5470d/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/a4afd5cab314/gr6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/f03f87e002d6/gr7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/7c5c7fcaf181/gr8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/b4888579b144/gr9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9991/7474200/9b7eb7866461/gr10.jpg

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本文引用的文献

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Radiative Thermal Memristor.辐射热忆阻器
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Hybrid Circuit of Memristor and Complementary Metal-Oxide-Semiconductor for Defect-Tolerant Spatial Pooling with Boost-Factor Adjustment.用于具有升压因子调整的容错空间池化的忆阻器与互补金属氧化物半导体混合电路。
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Modeling and Analysis of a Three-Terminal-Memristor-Based Conservative Chaotic System.基于三端忆阻器的保守混沌系统的建模与分析
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