Díez-Pascual Ana María, Sainz-Urruela Carlos, Vallés Cristina, Vera-López Soledad, Andrés María Paz San
Department of Analytical Chemistry, Physical Chemistry and Chemical Engineering, Faculty of Sciences, University of Alcalá, 28805 Alcalá de Henares, Madrid, Spain.
Institute of Chemistry Research, "Andrés M. del Río" (IQAR), University of Alcalá, Ctra. Madrid- Barcelona Km. 33.6, 28805 Alcalá de Henares, Madrid, Spain.
Nanomaterials (Basel). 2020 Jan 29;10(2):239. doi: 10.3390/nano10020239.
Graphene oxide (GO) is an attractive alternative to graphene for many applications due to its captivating optical, chemical, and electrical characteristics. In this work, GO powders with a different amount of surface groups were synthesized from graphite via an electrochemical two-stage process. Many synthesis conditions were tried to maximize the oxidation level, and comprehensive characterization of the resulting samples was carried out via elemental analysis, microscopies (TEM, SEM, AFM), X-ray diffraction, FT-IR and Raman spectroscopies as well as electrical resistance measurements. SEM and TEM images corroborate that the electrochemical process used herein preserves the integrity of the graphene flakes, enabling to obtain large, uniform and well exfoliated GO sheets. The GOs display a wide range of C/O ratios, determined by the voltage and time of each stage as well as the electrolyte concentration, and an unprecedented minimum C/O value was obtained for the optimal conditions. FT-IR evidences strong intermolecular interactions between neighbouring oxygenated groups. The intensity ratio of D/G bands in the Raman spectra is high for samples prepared using concentrated HSO as an electrolyte, indicative of many defects. Furthermore, these GOs exhibit smaller interlayer spacing than that expected according to their oxygen content, which suggests predominant oxidation on the flake edges. Results point out that the electrical resistance is conditioned mostly by the interlayer distance and not simply by the C/O ratio. The tuning of the oxidation level is useful for the design of GOs with tailorable structural, electrical, optical, mechanical, and thermal properties.
由于具有迷人的光学、化学和电学特性,氧化石墨烯(GO)在许多应用中是石墨烯的一种有吸引力的替代品。在这项工作中,通过电化学两步法从石墨合成了具有不同数量表面基团的GO粉末。尝试了许多合成条件以最大化氧化程度,并通过元素分析、显微镜技术(透射电子显微镜、扫描电子显微镜、原子力显微镜)、X射线衍射、傅里叶变换红外光谱和拉曼光谱以及电阻测量对所得样品进行了全面表征。扫描电子显微镜和透射电子显微镜图像证实,本文采用的电化学过程保持了石墨烯薄片的完整性,能够获得大尺寸、均匀且充分剥离的GO片材。GO显示出广泛的C/O比,这由每个阶段的电压和时间以及电解质浓度决定,并且在最佳条件下获得了前所未有的最小C/O值。傅里叶变换红外光谱证明相邻含氧基团之间存在强烈的分子间相互作用。使用浓H₂SO₄作为电解质制备的样品在拉曼光谱中的D/G带强度比很高,表明存在许多缺陷。此外,这些GO的层间距比根据其氧含量预期的要小,这表明在薄片边缘主要发生氧化。结果表明,电阻主要由层间距决定,而不仅仅由C/O比决定。氧化程度的调节对于设计具有可定制结构、电学、光学、机械和热性能的GO很有用。