硫酸钠催化下在SiO/Si衬底上直接生长连续且均匀的MoS薄膜
Direct Growth of Continuous and Uniform MoS Film on SiO/Si Substrate Catalyzed by Sodium Sulfate.
作者信息
Li Guanmeng, Wang Xiaoli, Han Bo, Zhang Weifeng, Qi Shuyan, Zhang Yan, Qiu Jiakang, Gao Peng, Guo Shaoshi, Long Run, Tan Zhenquan, Song Xue-Zhi, Liu Nan
机构信息
State Key Laboratory of Fine Chemicals, Panjin Branch of School of Chemical Engineering , Dalian University of Technology , 2 Dagong Road , Liaodongwan New District, Panjin 124221 , Liaoning , China.
Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China.
出版信息
J Phys Chem Lett. 2020 Feb 20;11(4):1570-1577. doi: 10.1021/acs.jpclett.9b03879. Epub 2020 Feb 11.
Because of its unique electronic band structure, molybdenum disulfide (MoS) has been regarded as a star semiconducting material. However, direct growth of continuous and high-quality MoS films on SiO/Si substrates is still very challenging. Here, we report a facile chemical vapor deposition (CVD) method based on synergistic modulation of precursor and NaSO catalysis, realizing the centimeter scale growth of a continuous MoS film on SiO/Si substrates. The as-grown MoS film had an excellent spatial homogeneity and crystal quality, with an edge length of the composite domain as large as 632 μm. Both experimental and theoretical results proved that Na tended to bond with SiO substrates rather than to interfere with as-grown MoS. Thus, they showed decent and uniform electrical performance, with electron mobilities as high as 5.9 cm V s We believe our method will pave a new way for MoS toward real application in modern electronics.
由于其独特的电子能带结构，二硫化钼（MoS）被视为一种明星半导体材料。然而，在SiO/Si衬底上直接生长连续且高质量的MoS薄膜仍然极具挑战性。在此，我们报道了一种基于前驱体协同调制和NaSO催化的简便化学气相沉积（CVD）方法，实现了在SiO/Si衬底上厘米级连续MoS薄膜的生长。所生长的MoS薄膜具有优异的空间均匀性和晶体质量，复合畴的边长高达632μm。实验和理论结果均证明，Na倾向于与SiO衬底结合而非干扰生长中的MoS。因此，它们表现出良好且均匀的电学性能，电子迁移率高达5.9 cm² V⁻¹ s⁻¹。我们相信我们的方法将为MoS在现代电子学中的实际应用开辟一条新途径。
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