Hu Shanshan, Finklea Harry, Li Wenyuan, Li Wei, Qi He, Zhang Nan, Liu Xingbo
Department of Mechanical and Aerospace Engineering, West Virginia University, Morgantown, West Virginia 26506, United States.
C. Eugene Bennett Department of Chemistry, West Virginia University, Morgantown, West Virginia 26506, United States.
ACS Appl Mater Interfaces. 2020 Mar 4;12(9):11126-11134. doi: 10.1021/acsami.9b17504. Epub 2020 Feb 19.
Direct current electrophoretic deposition (DC-EPD) has been successfully adopted to deposit Gd-doped ceria (GDC) onto yttrium stabilized zirconia (YSZ) previously. However, bubble evolution associated with the proton reduction results in deterioration of the quality of the GDC layer. For the purpose of lowering the densification temperature of the GDC layer by improving its green density, alternating current electrophoretic deposition (AC-EPD) is used to eliminate the bubble evolution. A dense GDC layer with a thickness of 6 μm is successfully obtained after sintering at 1250 °C. The barrier layer effectively eliminates the reaction between LaSrCoFeO (LSCF) and YSZ. The voltage waveform consists of a negative voltage step and a positive voltage step of varying magnitude and step length. The optimum frequency of 500 Hz leads to the maximum deposition yield which is linear with regard to deposition time. Moreover, with the increase of the negative to positive voltage ratio and the length of the negative step relative to the length of the positive step, the deposition rate grows correspondingly. Because the AC step voltages result in negligible faradaic reactions, the deposition process is controlled by the transport process and the desorption process, wherein the latter process is irreversible.
直流电泳沉积(DC-EPD)此前已成功用于将钆掺杂二氧化铈(GDC)沉积到钇稳定氧化锆(YSZ)上。然而,与质子还原相关的气泡产生导致GDC层质量下降。为了通过提高GDC层的生坯密度来降低其致密化温度,采用交流电泳沉积(AC-EPD)来消除气泡产生。在1250℃烧结后成功获得了厚度为6μm的致密GDC层。阻挡层有效地消除了镧锶钴铁氧体(LSCF)与YSZ之间的反应。电压波形由幅度和步长可变的负电压阶跃和正电压阶跃组成。500Hz的最佳频率导致最大沉积产率,该产率与沉积时间呈线性关系。此外,随着负电压与正电压之比以及负阶跃长度相对于正阶跃长度的增加,沉积速率相应增加。由于交流阶跃电压导致的法拉第反应可忽略不计,沉积过程由传输过程和解吸过程控制,其中后者是不可逆的。