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单层MoS缺陷态中的自旋-谷锁定效应

Spin-Valley Locking Effect in Defect States of Monolayer MoS.

作者信息

Wang Yaqian, Deng Longjiang, Wei Qilin, Wan Yi, Liu Zhen, Lu Xiao, Li Yue, Bi Lei, Zhang Li, Lu Haipeng, Chen Haiyan, Zhou Peiheng, Zhang Linbo, Cheng Yingchun, Zhao Xiaoxu, Ye Yu, Huang Wei, Pennycook Stephen John, Loh Kian Ping, Peng Bo

机构信息

National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.

出版信息

Nano Lett. 2020 Mar 11;20(3):2129-2136. doi: 10.1021/acs.nanolett.0c00138. Epub 2020 Feb 24.

Abstract

Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS; enhanced valley Zeeman splitting with an effective -factor of -6.2 is observed. Our results reveal that all five -orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.

摘要

二维(2D)过渡金属二硫属化物(TMD)中的能谷赝自旋允许对自旋-能谷极化和能谷间量子相干进行光学控制。TMD中的缺陷态会产生新的激子特性,并且理论上表现出自旋-能谷极化;然而,这一现象的实验实现仍然面临挑战。在此,我们报道了在化学气相沉积(CVD)生长的单层MoS₂中缺陷束缚的局域激子明确的能谷赝自旋;观察到具有-6.2的有效因子的增强能谷塞曼分裂。我们的结果表明,所有五个d轨道以及增加的有效电子质量都对缺陷态的能带移动有贡献,这展示了缺陷束缚的局域激子磁响应的新物理现象,与A激子的磁响应截然不同。我们的工作为通过缺陷操纵自旋-能谷自由度以实现谷电子学器件铺平了道路。

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