Jiang Sheng, Cai Yuefei, Feng Peng, Shen Shuoheng, Zhao Xuanming, Fletcher Peter, Esendag Volkan, Lee Kean-Boon, Wang Tao
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom.
ACS Appl Mater Interfaces. 2020 Mar 18;12(11):12949-12954. doi: 10.1021/acsami.9b19697. Epub 2020 Mar 5.
To fully exploit the advantages of GaN for electronic devices, a critical electric field that approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is necessary to explore a new approach toward the intrinsic limits of GaN electronics from the perspective of epitaxial growth. By using a novel two-dimensional growth mode benefiting from our high-temperature AlN buffer technology, which is different from the classic two-step growth approach, our high-electron-mobility transistors (HEMTs) demonstrate an extremely high breakdown field of 2.5 MV/cm approaching the theoretical limit of GaN and an extremely low off-state buffer leakage of 1 nA/mm at a bias of up to 1000 V. Furthermore, our HEMTs also exhibit an excellent figure-of-merit (/) of 5.13 × 10 V/Ω·cm.
为了充分发挥氮化镓在电子器件方面的优势，接近其理论值（3兆伏/厘米）的临界电场是理想的，但尚未实现。有必要从外延生长的角度探索一种突破氮化镓电子器件固有极限的新方法。通过采用一种受益于我们高温氮化铝缓冲技术的新型二维生长模式，这种模式不同于传统的两步生长方法，我们的高电子迁移率晶体管（HEMT）展现出高达2.5兆伏/厘米的极高击穿电场，接近氮化镓的理论极限，并且在高达1000伏的偏压下具有极低的截止态缓冲漏电流，仅为1纳安/毫米。此外，我们的HEMT还展现出5.13×10伏/Ω·厘米的优异品质因数（FOM）。
