用于Ka波段应用的具有厚铜金属化层、功率密度为8.2W/mm的氮化镓（GaN）高电子迁移率晶体管。

Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications.

作者信息

Lin Y C, Chen S H, Lee P H, Lai K H, Huang T J, Chang Edward Y, Hsu Heng-Tung

机构信息

Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.

Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.

出版信息

Micromachines (Basel). 2020 Feb 21;11(2):222. doi: 10.3390/mi11020222.

DOI:10.3390/mi11020222

PMID:32098124

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7074802/

Abstract

Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 μm adopted, the device exhibited a high output power density of 8.2 W/mm and a power-added efficiency (PAE) of 26% at 38 GHz. Such superior performance is mainly attributed to the substantial reduction of the source and drain resistance of the device. In addition to improvement in the Radio Frequency (RF) performance, the successful integration of the thick copper metallization in the device technology further reduces the manufacturing cost, making it extremely promising for future fifth-generation mobile communication system applications at millimeter-wave frequencies.

摘要

采用Ti/Pt/Ti扩散阻挡层的铜金属化氮化镓（GaN）高电子迁移率晶体管（HEMT）被制造出来并针对Ka波段应用进行了表征。采用6.8μm厚的铜金属化层时，该器件在38GHz频率下展现出8.2W/mm的高输出功率密度和26%的功率附加效率（PAE）。这种优异的性能主要归因于器件源极和漏极电阻的大幅降低。除了射频（RF）性能的提升外，厚铜金属化在器件技术中的成功集成进一步降低了制造成本，使其在毫米波频率的未来第五代移动通信系统应用中极具前景。