Lin Yu-Shyan, Lin Shin-Fu
Department of Materials Science and Engineering, National Dong Hwa University, 1, Sec. 2, Da Hsueh Rd., Shou-Feng, Hualien 974, Taiwan.
Micromachines (Basel). 2020 Dec 24;12(1):7. doi: 10.3390/mi12010007.
This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO passivation layer to undoped AlGaN/GaN HEMT's increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure ( ) of the HEMT with TiO passivation is significantly reduced.
本研究提出了通过金属有机化学气相沉积（MOCVD）系统生长的氮化铝镓/氮化镓/硅高电子迁移率晶体管（HEMT）。比较了有无不同钝化层的HEMT的大信号线性度和高频噪声。实验数据表明，在未掺杂的氮化铝镓/氮化镓HEMT中添加二氧化钛钝化层，在2.4 GHz时三阶截点（OIP3）的值提高了70%。此外，具有二氧化钛钝化的HEMT的最小噪声系数（ ）显著降低。
