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基于宽带隙器件的特刊社论：设计、制造与应用

Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications.

作者信息

Medjdoub Farid

机构信息

IEMN (Institute of Electronics, Microelectronics and Nanotechnology), CNRS (Centre National de Recherche Scientifique), Avenue Poincaré, 59650 Villeneuve d'Ascq, France.

出版信息

Micromachines (Basel). 2021 Jan 15;12(1):83. doi: 10.3390/mi12010083.

DOI:10.3390/mi12010083
PMID:33467567
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7830951/
Abstract

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era [...].

摘要

新兴的宽带隙（WBG）半导体具有推动全球产业发展的潜力，就如同50多年前硅（Si）芯片的发明开启了现代计算机时代一样[...]。

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