Liao Wugang, Zhao Siwen, Li Feng, Wang Cong, Ge Yanqi, Wang Huide, Wang Shibo, Zhang Han
Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
Nanoscale Horiz. 2020 May 1;5(5):787-807. doi: 10.1039/c9nh00743a. Epub 2020 Mar 4.
Over the past decade, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted tremendous research interest for future electronics owing to their atomically thin thickness, compelling properties and various potential applications. However, interface engineering including contact optimization and channel modulations for 2D TMDCs represents fundamental challenges in ultimate performance of ultrathin electronics. This article provides a comprehensive overview of the basic understanding of contacts and channel engineering of 2D TMDCs and emerging electronics benefiting from these varying approaches. In particular, we elucidate multifarious contact engineering approaches such as edge contact, phase engineering and metal transfer to suppress the Fermi level pinning effect at the metal/TMDC interface, various channel treatment avenues such as van der Waals heterostructures, surface charge transfer doping to modulate the device properties, and as well the novel electronics constructed by interface engineering such as diodes, circuits and memories. Finally, we conclude this review by addressing the current challenges facing 2D TMDCs towards next-generation electronics and offering our insights into future directions of this field.
在过去十年中，二维（2D）过渡金属二硫属化物（TMDCs）因其原子级的超薄厚度、引人注目的特性和各种潜在应用，在未来电子学领域引起了巨大的研究兴趣。然而，二维TMDCs的界面工程，包括接触优化和沟道调制，是超薄电子器件最终性能面临的基本挑战。本文全面概述了对二维TMDCs的接触和沟道工程的基本理解，以及受益于这些不同方法的新兴电子学。特别是，我们阐明了多种接触工程方法，如边缘接触、相工程和金属转移，以抑制金属/TMDC界面处的费米能级钉扎效应；介绍了各种沟道处理途径，如范德华异质结构、表面电荷转移掺杂以调节器件性能；还介绍了通过界面工程构建的新型电子器件，如二极管、电路和存储器。最后，我们通过阐述二维TMDCs在下一代电子学中面临的当前挑战，并对该领域的未来方向提出见解，来结束本综述。
