Li Xiaohui, Yang Junbo, Sun Hang, Huang Ling, Li Hui, Shi Jianping
The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China.
Adv Mater. 2023 Jul 5:e2305115. doi: 10.1002/adma.202305115.
2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.
二维半导体过渡金属二硫属化物（TMDCs）具有原子级的超薄厚度、无悬键表面、灵活的能带结构以及与硅兼容的特性，使其成为后摩尔时代构建最先进场效应晶体管最有前景的沟道材料之一。然而，现有的二维半导体TMDCs由于其小的畴尺寸以及缺乏调制固有物理性质的有效方法，无法满足电子学实际应用的行业标准。因此，制备和掺杂具有晶圆尺寸的二维半导体TMDCs单晶至关重要。在这篇综述中，系统地总结了关于二维半导体TMDCs多晶和单晶薄膜晶圆级生长的最新进展。提出了通过衬底设计对二维TMDCs的畴取向控制以及单向排列的二维岛的无缝拼接。此外，还讨论了二维半导体TMDCs的精确和均匀掺杂及其对电子器件性能的影响。最后，强调了与提高TMDCs电子器件性能相关的主要挑战，并提出了进一步的发展方向。这篇综述对二维半导体TMDCs的高性能器件应用进行了系统而深入的总结。
