Wang Cheng-Jyun, You Hsin-Chiang, Ou Jen-Hung, Chu Yun-Yi, Ko Fu-Hsiang
Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu City 30010, Taiwan.
Department of Electronic Engineering, National Chin-Yi University of Technology No. 57, Sec. 2, Zhongshan Road, Taiping District, Taichung City 41170, Taiwan.
Nanomaterials (Basel). 2020 Mar 4;10(3):458. doi: 10.3390/nano10030458.
Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel structures by which temperature-induced Marangoni flow can be used to narrow the channel width from 318.9 ± 44.1 μm to 180.1 ± 13.9 μm via a temperature gradient. Furthermore, a simple and efficient oxygen plasma treatment was used to enhance the electrical characteristics of switching / ratio of approximately 10. Therefore, the stable and excellent gate bias-controlled photo-transistors were fabricated and characterized in detail for ultraviolet (UV) and visible light sensing. The photodetector exhibited a superior photoresponse with a significant increase of more than 2 orders of magnitude larger drain current generated upon UV illumination. The results could be useful for the development of UV photodetectors by the direct-patterning ink-jet printing technique. Additionally, we also have successfully demonstrated that a metal-semiconductor junction structure that enables plasmon energy detection by using the plasmonic effects is an efficient conversion of plasmon energy to an electrical signal. The device showed a significant variations negative shift of threshold voltage under different light power density with exposure of visible light. With the ZnO-based TFTs, only ultraviolet light detection extends to the visible light wavelength.
展示了用于紫外光（UV）和可见光光电探测的具有三维（3-D）沟道结构的氧化锌基薄膜晶体管（ZnO基TFT）的直接喷墨打印。在此，我们展示了通过温度诱导的马兰戈尼流可利用温度梯度将沟道宽度从318.9±44.1μm缩小至180.1±13.9μm的沟道结构。此外，使用了一种简单有效的氧等离子体处理来增强开关/比率约为10的电学特性。因此，制造了稳定且优异的栅极偏置控制光晶体管，并对其进行了详细的紫外（UV）和可见光传感特性表征。该光电探测器表现出优异的光响应，在紫外光照下产生的漏极电流显著增加，增幅超过2个数量级。这些结果对于通过直接图案化喷墨打印技术开发紫外光电探测器可能是有用的。此外，我们还成功证明了一种利用等离子体效应实现等离子体能量探测的金属-半导体结结构是将等离子体能量有效转换为电信号的结构。该器件在不同光功率密度的可见光照射下，阈值电压出现了显著的负向偏移。利用ZnO基TFT，仅紫外光探测扩展到了可见光波长范围。
