Zhao Ming-Jie, Sun Zhi-Tao, Hsu Chia-Hsun, Huang Pao-Hsun, Zhang Xiao-Ying, Wu Wan-Yu, Gao Peng, Qiu Yu, Lien Shui-Yang, Zhu Wen-Zhang
School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China.
Nanomaterials (Basel). 2020 Mar 4;10(3):459. doi: 10.3390/nano10030459.
Zinc oxide (ZnO) attracts much attention owing to its remarkable electrical and optical properties for applications in optoelectronics. In this study, ZnO thin films were prepared by spatial atomic layer deposition with diethylzinc and water as precursors. The substrate temperature was varied from 55 to 135 °C to investigate the effects on the optical, electrical, and structural properties of the films. All ZnO samples exhibit an average transmittance in visible and near-infrared light range exceeding 80% and a resistivity in the range of (3.2-9.0) × 10 Ω·cm when deposited on a borosilicate glass with a refractive index of ≈1.52. The transmittance, band gap, refractive index, and extinction coefficient are rarely affected, while the resistivity only slightly decreases with increasing temperature. This technique provides a wide process window for depositing ZnO thin films. The results revealed that the films deposited at a substrate of 55 °C were highly crystalline with a preferential (1 0 0) orientation. In addition, the grains grow larger as the substrate temperature increases. The electrical properties and reliability of ZnO/PET samples are also studied in this paper.
氧化锌（ZnO）因其在光电子学应用中具有卓越的电学和光学性能而备受关注。在本研究中，以二乙基锌和水为前驱体，通过空间原子层沉积法制备了ZnO薄膜。将衬底温度在55至135°C之间变化，以研究其对薄膜光学、电学和结构性能的影响。当沉积在折射率约为1.52的硼硅酸盐玻璃上时，所有ZnO样品在可见光和近红外光范围内的平均透过率超过80%，电阻率在(3.2 - 9.0)×10Ω·cm范围内。透过率、带隙、折射率和消光系数受影响较小，而电阻率仅随温度升高略有下降。该技术为沉积ZnO薄膜提供了宽广的工艺窗口。结果表明，在55°C衬底上沉积的薄膜具有高度结晶性，优先取向为(1 0 0)。此外，随着衬底温度升高，晶粒会长大。本文还研究了ZnO/PET样品的电学性能和可靠性。
