Favre Grégoire, Horat Sibylle K, Herrmann François R, Gothuey Isabelle, Ventura Joseph, Merlo Marco C G, Missonnier Pascal
Laboratory for Psychiatric Neuroscience and Psychotherapy, Department of Medicine, Faculty of Science & Medicine, University of Fribourg, Chemin du Musée 5, CH 1700 Fribourg, Switzerland.
Mental Health Network Fribourg (RFSM), Sector of psychiatry and psychotherapy for adults, L'Hôpital 140, Case postale 90, CH 1633 Marsens, Switzerland.
Schizophr Res Cogn. 2020 Mar 2;20:100174. doi: 10.1016/j.scog.2020.100174. eCollection 2020 Jun.
The topic of false memory in schizophrenia has been well documented in earlier research contributions. To date, there is no study exploring the implications of specific neural networks during this phenomenon in patients suffering from schizophrenia.
We compared 17 patients suffering from psychosis (SCZ) to 33 healthy controls (HC) performing a verbal memory task designed to produce false memories, i.e. the Deese-Roediger-McDermott paradigm (DRM). Electroencephalography was used to specifically analyze the P2 and N400 event-related potentials components.
The SCZ patients showed a reduced ability to distinguish between true and false memories as assessed by the A' index which was calculated based on the false and true memory rates. The morphology of the P2 differed in frontal electrode region with a lower amplitude in SCZ. In addition, the amplitude of N400 was more pronounced (more negative) in HC than in SCZ in centro-parietal electrode site.
We suggest that the differences found in P2 amplitude are associated with difficulties of SCZ patients to efficiently compare item-specific features of a mnesic elements to incoming stimuli which impair the subsequent verbal memory information processing reflected by the N400 component amplitude decrease. These results are consistent with the idea that SCZ use a different strategy while they perform the DRM paradigm.
精神分裂症中的错误记忆主题在早期研究文献中已有充分记载。迄今为止,尚无研究探讨精神分裂症患者在此现象发生期间特定神经网络的影响。
我们将17名患有精神病的患者(SCZ)与33名健康对照者(HC)进行比较,他们执行一项旨在产生错误记忆的言语记忆任务,即Deese-Roediger-McDermott范式(DRM)。使用脑电图专门分析P2和N400事件相关电位成分。
根据基于错误和真实记忆率计算的A'指数评估,SCZ患者区分真实和错误记忆的能力降低。P2的形态在额叶电极区域有所不同,SCZ中的振幅较低。此外,在中央顶叶电极部位,HC中N400的振幅比SCZ中更明显(更负)。
我们认为,P2振幅中发现的差异与SCZ患者难以有效地将记忆元素的特定项目特征与传入刺激进行比较有关,这会损害随后由N400成分振幅降低所反映的言语记忆信息处理。这些结果与SCZ在执行DRM范式时使用不同策略的观点一致。