Shim Gi Woong, Hong Woonggi, Cha Jun-Hwe, Park Jung Hwan, Lee Keon Jae, Choi Sung-Yool
Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA.
Adv Mater. 2020 Sep;32(35):e1907166. doi: 10.1002/adma.201907166. Epub 2020 Mar 16.
As the need for super-high-resolution displays with various form factors has increased, it has become necessary to produce high-performance thin-film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a-Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light-emitting diode displays, and also to overcome the performance and reliability issues of a-Si:H, low-temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a-Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next-generation channel materials is discussed.
随着对具有各种外形因素的超高分辨率显示器的需求不断增加，生产高性能薄膜晶体管（TFT）变得必要，这些晶体管能够实现显示器中每个像素更快的开关速度和更高的电流驱动。在过去几十年中，氢化非晶硅（a-Si:H）已被广泛用作TFT沟道材料。最近，为了满足诸如有机发光二极管显示器等新型显示器的要求，并克服a-Si:H的性能和可靠性问题，低温多晶硅和非晶氧化物半导体已部分取代a-Si:H沟道材料。本文探讨了商业显示器中TFT的基本材料特性和器件结构，然后讨论了原子级薄的层状过渡金属二硫属化物作为下一代沟道材料的潜力。
