Antonyshyn I, Wagner F R, Bobnar M, Sichevych O, Burkhardt U, Schmidt M, König M, Poeppelmeier K, Mackenzie A P, Svanidze E, Grin Yu
Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Strasse 40, 01187, Dresden, Germany.
Department of Chemistry, Northwestern University, 2145 Sheridan Rd., Evanston, IL, 60208, USA.
Angew Chem Int Ed Engl. 2020 Jun 26;59(27):11136-11141. doi: 10.1002/anie.202002693. Epub 2020 Apr 30.
An efficient application of a material is only possible if we know its physical and chemical properties, which is frequently obstructed by the presence of micro- or macroscopic inclusions of secondary phases. While sometimes a sophisticated synthesis route can address this issue, often obtaining pure material is not possible. One example is TaGeIr, which has highly sample-dependent properties resulting from the presence of several impurity phases, which influence electronic transport in the material. The effect of these minority phases was avoided by manufacturing, with the help of focused-ion-beam, a μm-scale device containing only one phase-TaGeIr. This work provides evidence for intrinsic semiconducting behavior of TaGeIr and serves as an example of selective single-domain device manufacturing. This approach gives a unique access to the properties of compounds that cannot be synthesized in single-phase form, sparing costly and time-consuming synthesis efforts.
只有当我们了解一种材料的物理和化学性质时，它才能得到有效应用，而这常常因二次相的微观或宏观夹杂物的存在而受阻。虽然有时复杂的合成路线可以解决这个问题，但通常无法获得纯材料。一个例子是TaGeIr，由于存在几个杂质相，其性质高度依赖于样品，这些杂质相影响材料中的电子传输。通过聚焦离子束制造了一个仅包含一个相TaGeIr的微米级器件，避免了这些少数相的影响。这项工作为TaGeIr的本征半导体行为提供了证据，并作为选择性单畴器件制造的一个例子。这种方法为无法以单相形式合成的化合物的性质提供了独特的研究途径，节省了昂贵且耗时的合成工作。
