Hu Xuemin, Qu Hengze, Xu Lili, Liu Wenqiang, Guo Tingting, Cai Bo, Yu Xuechao, Zhu Junwu, Zhang Shengli
Key Laboratory for Soft Chemistry and Functional Materials, Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China.
Nanoscale. 2020 May 14;12(18):9958-9963. doi: 10.1039/d0nr01838d.
Identifying novel 2D semiconductors with promising electronic properties and transport performances for the development of electronic and optoelectronic applications is of utmost importance. Here, we show a detailed study of the electronic properties and ballistic quantum transport performance of a new 2D semiconductor, SbSiTe3, based on density functional theory (DFT) and non-equilibrium Green's function (NEGF) formalism. Promisingly, monolayer SbSiTe3 owns an indirect band gap of 1.61 eV with a light electron effective mass (0.13m0) and an anisotropic hole effective mass (0.49m0 and 1.34m0). The ballistic performance simulations indicate that the 10 nm monolayer SbSiTe3 n- and p-MOSFETs display a steep subthreshold swing of about 80 mV dec-1 and a high on/off ratio (106), which indicate a good gate-controlling capability. As the channel length of SbSiTe3 decreases to 5 nm, its p-MOSFET also effectively suppresses the intra-band tunneling. Therefore, 2D SbSiTe3 is a potential semiconductor for future nanoelectronics.
识别具有有望用于电子和光电子应用开发的电子特性和传输性能的新型二维半导体至关重要。在此，我们基于密度泛函理论（DFT）和非平衡格林函数（NEGF）形式，对一种新型二维半导体SbSiTe3的电子特性和弹道量子传输性能进行了详细研究。令人期待的是，单层SbSiTe3具有1.61 eV的间接带隙，电子有效质量较轻（0.13m0），空穴有效质量具有各向异性（0.49m0和1.34m0）。弹道性能模拟表明，10 nm的单层SbSiTe3 n型和p型金属氧化物半导体场效应晶体管（MOSFET）呈现出约80 mV dec-1的陡峭亚阈值摆幅和高开关比（106），这表明其具有良好的栅极控制能力。当SbSiTe3的沟道长度减小到5 nm时，其p型MOSFET也能有效抑制带内隧穿。因此，二维SbSiTe3是未来纳米电子学的潜在半导体材料。
