Toufani Maryam, Kasap Sibel, Tufani Ali, Bakan Feray, Weber Stefan, Erdem Emre
Faculty of Engineering and Natural Sciences, Sabanci University, TR-34956, Istanbul, Turkey.
Nanoscale. 2020 Jun 28;12(24):12790-12800. doi: 10.1039/d0nr02028a. Epub 2020 May 6.
Two kinds of electrode materials were produced to fabricate asymmetric supercapacitor devices: (i) Highly defective, n-type wide bandgap semiconductor ZnO nanocrystalline electrodes below 50 nm were synthesized with the aid of the high energy ball milling technique. (ii) Flexible 3D-graphene foams were synthesized via the chemical vapor deposition technique. Extensive defect structure analysis was performed via enhanced characterization techniques mainly the spectroscopy ones: electron paramagnetic resonance (EPR), Raman, and photoluminescence (PL). Compared to bulk ZnO electrodes the nanoscale ZnO electrodes revealed a dramatic increase of defect concentration. The surface defect plays a crucial role in the electrochemical performance of supercapacitor devices. Strong decreases in charge transfer resistance were observed for the smallest crystallite size which is 15 nm. This work also shows that synthesis, controlling the defect structures, electronic and electrical characterization and the device production are extremely important to obtain high performance faradaic asymmetric supercapacitors.
(i) 在高能球磨技术的辅助下合成了尺寸小于50 nm的高度缺陷型n型宽带隙半导体ZnO纳米晶电极。(ii) 通过化学气相沉积技术合成了柔性3D石墨烯泡沫。主要借助光谱学增强表征技术进行了广泛的缺陷结构分析:电子顺磁共振(EPR)、拉曼光谱和光致发光(PL)。与块状ZnO电极相比,纳米级ZnO电极的缺陷浓度显著增加。表面缺陷在超级电容器器件的电化学性能中起着关键作用。对于最小晶粒尺寸为15 nm的样品,观察到电荷转移电阻显著降低。这项工作还表明,合成、控制缺陷结构、电子和电学表征以及器件制造对于获得高性能的法拉第非对称超级电容器极其重要。