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具有极高带宽扩展能力的氮化铝微机电系统滤波器。

AlN MEMS filters with extremely high bandwidth widening capability.

作者信息

Gao Anming, Liu Kangfu, Liang Junrui, Wu Tao

机构信息

Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61820 USA.

School of Information Science and Technology (SIST), ShanghaiTech University, Shanghai, 201210 China.

出版信息

Microsyst Nanoeng. 2020 Sep 7;6:74. doi: 10.1038/s41378-020-00183-5. eCollection 2020.

DOI:10.1038/s41378-020-00183-5
PMID:34567684
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8433195/
Abstract

This paper presents radio frequency (RF) microelectromechanical system (MEMS) filters with extremely high bandwidth widening capability. The proposed filtering topologies include hybrid configurations consisting of piezoelectric MEMS resonators and surface-mounted lumped elements. The MEMS resonators set the center frequency and provide electromechanical coupling to construct the filters, while the lumped-element-based matching networks help widen the bandwidth (BW) and enhance the out-of-band rejection. Aluminum nitride (AlN) S0 Lamb wave resonators are then applied to the proposed filtering topologies. AlN S0 first- and second-order wideband filters are studied and have shown prominent performance. Finally, the AlN S0 first-order wideband filter is experimentally implemented and characterized. The demonstrated first-order filter shows a large fractional bandwidth (FBW) of 5.6% (achieved with a resonator coupling of 0.94%) and a low insertion loss (IL) of 1.84 dB. The extracted bandwidth widening factor (BWF) is 6, which is approximately 12 times higher than those of the current ladder or lattice filtering topologies. This impressive bandwidth widening capability holds great potential for satisfying the stringent BW requirements of bands n77, n78, and n79 of 5G new radio (NR) and will overcome an outstanding technology hurdle in placing 5G NR into the marketplace.

摘要

本文介绍了具有极高带宽扩展能力的射频（RF）微机电系统（MEMS）滤波器。所提出的滤波拓扑结构包括由压电MEMS谐振器和表面贴装集总元件组成的混合配置。MEMS谐振器设定中心频率并提供机电耦合以构建滤波器，而基于集总元件的匹配网络有助于扩展带宽（BW）并增强带外抑制。然后将氮化铝（AlN）S0兰姆波谐振器应用于所提出的滤波拓扑结构。对AlN S0一阶和二阶宽带滤波器进行了研究，并显示出卓越的性能。最后，通过实验实现并表征了AlN S0一阶宽带滤波器。所展示的一阶滤波器显示出5.6%的大分数带宽（FBW）（通过0.94%的谐振器耦合实现）和1.84 dB的低插入损耗（IL）。提取的带宽扩展因子（BWF）为6，约为当前梯形或晶格滤波拓扑结构的12倍。这种令人印象深刻的带宽扩展能力在满足5G新无线电（NR）频段n77、n78和n79严格的带宽要求方面具有巨大潜力，并将克服将5G NR推向市场的一个突出技术障碍。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a26/8433195/f6601af8ff6c/41378_2020_183_Fig8_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a26/8433195/f6601af8ff6c/41378_2020_183_Fig8_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a26/8433195/f6601af8ff6c/41378_2020_183_Fig8_HTML.jpg

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