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用于集成光子学的单片磷化铟/绝缘体上硅平台。

A monolithic InP/SOI platform for integrated photonics.

作者信息

Yan Zhao, Han Yu, Lin Liying, Xue Ying, Ma Chao, Ng Wai Kit, Wong Kam Sing, Lau Kei May

机构信息

Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.

Department of Physics and William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.

出版信息

Light Sci Appl. 2021 Sep 26;10(1):200. doi: 10.1038/s41377-021-00636-0.

DOI:10.1038/s41377-021-00636-0
PMID:34565795
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8473568/
Abstract

The deployment of photonic integrated circuits (PICs) necessitates an integration platform that is scalable, high-throughput, cost-effective, and power-efficient. Here we present a monolithic InP on SOI platform to synergize the advantages of two mainstream photonic integration platforms: Si photonics and InP photonics. This monolithic InP/SOI platform is realized through the selective growth of both InP sub-micron wires and large dimension InP membranes on industry-standard (001)-oriented silicon-on-insulator (SOI) wafers. The epitaxial InP is in-plane, dislocation-free, site-controlled, intimately positioned with the Si device layer, and placed right on top of the buried oxide layer to form "InP-on-insulator". These attributes allow for the realization of various photonic functionalities using the epitaxial InP, with efficient light interfacing between the III-V devices and the Si-based waveguides. We exemplify the potential of this InP/SOI platform for integrated photonics through the demonstration of lasers with different cavity designs including subwavelength wires, square cavities, and micro-disks. Our results here mark a critical step forward towards fully-integrated Si-based PICs.

摘要

光子集成电路（PIC）的部署需要一个可扩展、高通量、具有成本效益且节能的集成平台。在此，我们展示了一种基于绝缘体上硅（SOI）的单片铟磷（InP）平台，以融合两种主流光子集成平台——硅光子学和铟磷光子学的优势。这种单片InP/SOI平台是通过在行业标准的（001）取向绝缘体上硅（SOI）晶圆上选择性生长InP亚微米线和大尺寸InP膜来实现的。外延生长的InP是面内的、无位错的、位置可控的，与硅器件层紧密贴合，并直接位于掩埋氧化物层之上，形成“绝缘体上InP”。这些特性使得利用外延InP实现各种光子功能成为可能，同时在III-V族器件和硅基波导之间实现高效的光接口。我们通过展示具有不同腔设计（包括亚波长线、方形腔和微盘）的激光器，例证了这个InP/SOI平台在集成光子学方面的潜力。我们在此取得的成果标志着向完全集成的硅基PIC迈出了关键的一步。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/40248bf32023/41377_2021_636_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/715226b10281/41377_2021_636_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/516451d83ed6/41377_2021_636_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/b0cf11bd7700/41377_2021_636_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/ee0705dc29ed/41377_2021_636_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/73eda3108b91/41377_2021_636_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/40248bf32023/41377_2021_636_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/715226b10281/41377_2021_636_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/516451d83ed6/41377_2021_636_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/b0cf11bd7700/41377_2021_636_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/ee0705dc29ed/41377_2021_636_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/73eda3108b91/41377_2021_636_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae47/8473568/40248bf32023/41377_2021_636_Fig6_HTML.jpg

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