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掺砷层状氮族氧硒化物NdOFSbAsSe的晶体结构与热电输运性质

Crystal Structure and Thermoelectric Transport Properties of As-Doped Layered Pnictogen Oxyselenides NdOFSbAsSe.

作者信息

Morino Kota, Goto Yosuke, Miura Akira, Moriyoshi Chikako, Kuroiwa Yoshihiro, Mizuguchi Yoshikazu

机构信息

Department of Physics, Tokyo Metropolitan University, 1-1 Minami-osawa, Hachioji, Tokyo 192-0397, Japan.

Faculty of Engineering, Hokkaido University, Kita 13, Nishi 8, Sapporo 060-8628, Japan.

出版信息

Materials (Basel). 2020 May 7;13(9):2164. doi: 10.3390/ma13092164.

Abstract

We report the synthesis and thermoelectric transport properties of As-doped layered pnictogen oxyselenides NdOFSbAsSe ( ≤ 0.6), which are predicted to show high-performance thermoelectric properties based on first-principles calculation. The crystal structure of these compounds belongs to the tetragonal 4/ space group (No. 129) at room temperature. The lattice parameter decreases with increasing , while remains almost unchanged among the samples. Despite isovalent substitution of As for Sb, electrical resistivity significantly rises with increasing . Very low thermal conductivity of less than 0.8 WmK is observed at temperatures between 300 and 673 K for all the examined samples. For As-doped samples, the thermal conductivity further decreases above 600 K. Temperature-dependent synchrotron X-ray diffraction indicates that an anomaly also occurs in the -axis length at around 600 K, which may relate to the thermal transport properties.

摘要

我们报道了As掺杂的层状氧族氮化物NdOFSbAsSe(≤0.6)的合成及其热电输运性质,基于第一性原理计算预测其具有高性能热电性质。这些化合物在室温下的晶体结构属于四方晶系4/空间群(编号129)。晶格参数随着的增加而减小,而在样品中几乎保持不变。尽管As对Sb进行了等价取代,但随着的增加,电阻率显著升高。在300至673K的温度范围内,所有测试样品的热导率都非常低,小于0.8WmK。对于As掺杂样品,在600K以上热导率进一步降低。随温度变化的同步辐射X射线衍射表明,在600K左右轴长也出现异常,这可能与热输运性质有关。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/baa1/7254281/408f99580496/materials-13-02164-g001.jpg

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