Advanced Research Division, Panasonic Corporation, 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto, 619-0237, Japan.
Adv Mater. 2016 Dec;28(46):10182-10187. doi: 10.1002/adma.201603955. Epub 2016 Sep 30.
Thermoelectric performance in the layered Zintl phase n-type Mg (Sb,Bi) is reported. Insertion of the excess Mg into the compounds is crucial for realizing n-type carrier transport with multivalley and isotropic character. An excellent ZT of 1.51 ± 0.06 at 716 K is achieved in the sintered polycrystals at the composition of Mg Sb Bi Te .
报道了层状 Zintl 相 n 型 Mg(Sb,Bi)的热电性能。向化合物中插入过量的 Mg 对于实现具有多谷和各向同性特征的 n 型载流子输运至关重要。在 Mg Sb Bi Te 的组成下,烧结多晶中实现了 1.51±0.06 的优异 ZT 值,温度为 716 K。