Ciorciaro Livio, Kroner Martin, Watanabe Kenji, Taniguchi Takashi, Imamoglu Atac
Institut für Quantenelektronik, ETH Zürich, Auguste-Piccard-Hof 1, 8093 Zürich, Switzerland.
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Phys Rev Lett. 2020 May 15;124(19):197401. doi: 10.1103/PhysRevLett.124.197401.
van der Waals heterostructures combining two-dimensional magnetic and semiconducting layers constitute a promising platform for interfacing magnetism, electronics, and optics. Here, we use resonant optical reflection spectroscopy to observe the magnetic proximity effect in a gate-tunable MoSe_{2}/CrBr_{3} heterostructure. The high quality of the interface leads to a giant zero-field splitting of the K and K^{'} valley excitons in MoSe_{2}, equivalent to an external magnetic field of 12 T, with a weak but distinct electric field dependence that hints at potential for electrical control of magnetization. The magnetic proximity effect allows us to use resonant optical spectroscopy to fully characterize the CrBr_{3} magnet, determining the easy-axis coercive field, the magnetic anisotropy energy, and critical exponents associated with spin susceptibility and magnetization.
结合二维磁性层和半导体层的范德华异质结构,是连接磁学、电子学和光学的一个很有前景的平台。在此,我们利用共振光反射光谱法,来观测栅极可调谐的二硒化钼(MoSe₂)/溴化铬(CrBr₃)异质结构中的磁近邻效应。高质量的界面导致二硒化钼中K和K'谷激子出现巨大的零场分裂,相当于12特斯拉的外磁场,且电场依赖性微弱但明显,这暗示了磁化的电控制潜力。磁近邻效应使我们能够利用共振光谱法全面表征溴化铬磁体,确定易轴矫顽场、磁各向异性能量以及与自旋磁化率和磁化相关的临界指数。