Borchert James W, Zschieschang Ute, Letzkus Florian, Giorgio Michele, Weitz R Thomas, Caironi Mario, Burghartz Joachim N, Ludwigs Sabine, Klauk Hagen
Max Planck Institute for Solid State Research, Stuttgart, Germany.
Institute of Polymer Chemistry, Universität Stuttgart, Stuttgart, Germany.
Sci Adv. 2020 May 20;6(21):eaaz5156. doi: 10.1126/sciadv.aaz5156. eCollection 2020 May.
The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Ω·cm, on/off current ratios as large as 10, subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques.
在过去几十年里，有机薄膜晶体管（TFT）发展的主要驱动力在于在需要低温处理的非常规衬底上进行电子应用的前景。许多此类应用的一个关键要求是在锂离子电池提供的低工作电压（约3V）下实现高频开关或放大。然而，迄今为止，大多数有机TFT技术的动态性能有限，除非施加高工作电压以减轻高接触电阻和大寄生电容。在此，我们展示了具有创纪录的静态和动态性能的柔性低压有机TFT，包括低至10Ω·cm的接触电阻、高达10的开/关电流比、低至59mV/十倍频程的亚阈值摆幅、反相器和环形振荡器中低于80ns的信号延迟以及高达21MHz的渡越频率，同时使用的是一种倒置共面TFT结构，该结构可轻松适应行业标准光刻技术。
