Zare Bidoky Fazel, Frisbie C Daniel
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States.
DuPont Electronics and Industrial, Emerging Technologies, Experimental Station, 200 Powder Mill Road, Wilmington, Delaware 19803, United States.
ACS Appl Mater Interfaces. 2022 May 11;14(18):21295-21300. doi: 10.1021/acsami.2c01585. Epub 2022 Apr 27.
Electrolyte-gated transistors (EGTs) have emerging applications in physiological recording, neuromorphic computing, sensing, and flexible printed electronics. A challenge for these devices is their slow switching speed, which has several causes. Here, we report the fabrication and characterization of n-type ZnO-based EGTs with signal propagation delays as short as 70 ns. Propagation delays are assessed in dynamically operating inverters and five-stage ring oscillators as a function of channel dimensions and supply voltages up to 3 V. Substantial decreases in switching time are realized by minimizing parasitic resistances and capacitances that are associated with the electrolyte in these devices. Stable switching at 1-10 MHz is achieved in individual inverter stages with 10-40 μm channel lengths, and analysis suggests that further improvements are possible.
电解质门控晶体管（EGT）在生理记录、神经形态计算、传感和柔性印刷电子等领域有着新兴应用。这些器件面临的一个挑战是其开关速度较慢，这有多种原因。在此，我们报告了基于n型氧化锌的EGT的制造与特性，其信号传播延迟短至70纳秒。传播延迟在动态运行的反相器和五级环形振荡器中作为沟道尺寸和高达3伏电源电压的函数进行评估。通过最小化与这些器件中的电解质相关的寄生电阻和电容，实现了开关时间的大幅降低。在沟道长度为10 - 40微米的单个反相器级中实现了1 - 10兆赫的稳定开关，分析表明进一步改进是可能的。
