Nugraha Mohamad Insan, Yang Yu-Ying, Liu Zhongzhe, Harrison George T, Ardhi Ryanda Enggar Anugrah, Firdaus Yuliar, He Qiao, Luo Linqu, Hedhili Mohamed Nejib, Thaler Marco, Ling Zhaoheng, Zeilerbauer Matthias, Patera Laerte L, Tsetseris Leonidas, Fatayer Shadi, Heeney Martin, Anthopoulos Thomas D
King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia.
Research Center for Nanotechnology Systems, National Research and Innovation Agency (BRIN), South Tangerang, Banten, 15314, Indonesia.
Adv Mater. 2025 Feb;37(5):e2413157. doi: 10.1002/adma.202413157. Epub 2024 Dec 10.
The significant contact resistance at the metal-semiconductor interface is a well-documented issue for organic thin-film transistors (OTFTs) that hinders device and circuit performance. Here, this issue is tackled by developing three new thiol carbazole-based self-assembled monolayer (SAM) molecules, namely tBu-2SCz, 2SCz, and Br-2SCz, and utilizing them as carrier-selective injection interlayers. The SAMs alter the work function of gold electrodes by more than 1 eV, making them suitable for use in hole and electron-transporting OTFTs. Scanning tunneling microscopy analysis indicates that 2SCz and Br-2SCz form highly ordered molecular rows, resulting in work function values of 4.86 and 5.48 eV, respectively. The latter value is higher than gold electrodes modified by the commonly used pentafluorobenzenethiol (≈5.33 eV), making Br-2SCz promising for hole injection. Conversely, tBu-2SCz appears disordered with a lower work function of 4.52 eV, making it more suitable for electron injection. These intriguing properties are leveraged to demonstrate hole- and electron-transporting OTFTs with improved operating characteristics. All-organic complementary inverters are finally demonstrated by integrating p- and n-channel OTFTs, showcasing the potential of this simple yet powerful contact work function engineering approach. The present study highlights the versatility of thiol carbazole SAMs as carrier injecting interlayers for OTFTs and integrated circuits.
金属-半导体界面处显著的接触电阻是有机薄膜晶体管(OTFT)中一个有充分文献记载的问题,它会阻碍器件和电路性能。在此,通过开发三种新型的基于硫醇咔唑的自组装单分子层(SAM)分子,即叔丁基-2SCz、2SCz和溴-2SCz,并将它们用作载流子选择性注入中间层,来解决这个问题。这些SAM使金电极的功函数改变超过1 eV,使其适用于空穴和电子传输的OTFT。扫描隧道显微镜分析表明,2SCz和溴-2SCz形成高度有序的分子排列,功函数值分别为4.86和5.48 eV。后一个值高于常用的五氟苯硫醇修饰的金电极(≈5.33 eV),这使得溴-2SCz有望用于空穴注入。相反,叔丁基-2SCz呈现无序状态,功函数较低,为4.52 eV,使其更适合电子注入。利用这些有趣的特性展示了具有改进操作特性的空穴和电子传输OTFT。最后,通过集成p沟道和n沟道OTFT展示了全有机互补逆变器,展示了这种简单而强大的接触功函数工程方法的潜力。本研究突出了硫醇咔唑SAM作为OTFT和集成电路的载流子注入中间层的多功能性。