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通过苝酐背接触实现的 SbS-噻蒽结开路光电压超过 950 mV,平均为 840 mV。

Open-Circuit Photovoltage Exceeding 950 mV with an 840 mV Average at SbS-Thianthrene Junctions Enabled by Thioperylene Anhydride Back Contacts.

作者信息

Doiron Curtis W, Fitzpatrick Nicholas A, Masucci Clare P, Martin Julia L, Carl Alexander D, Grimm Ronald L

机构信息

Department of Chemistry and Biochemistry; Life Science and Bioengineering Center; Worcester Polytechnic Institute, 100 Institute Road, Worcester, Massachusetts 01609, United States.

出版信息

ACS Omega. 2020 Jun 26;5(27):16875-16884. doi: 10.1021/acsomega.0c02077. eCollection 2020 Jul 14.

Abstract

Covalently attached perylene monolayers serve as back contacts for SbS photoelectrochemical cells with a thianthrene front, rectifying contact. Covalent attachment of perylenetetracarboxylic dianhydride, PTCDA, to Si(111) utilizes an anhydride-to-imide conversion at surface-attached amines. For SbS solar absorbers, we hypothesized that a terminal thioperylene anhydride, i.e., S=C-O-C=S, formed from thionation of the terminal perylene anhydride would serve as a soft, electron-selective and hole-blocking back contact. We explored several routes to convert carbonyls to thiocarbonyls on surface-attached perylene anhydrides including Lawesson's reagent, PS, and a PS-pyridine complex. Here, PS in toluene yielded the highest conversion as quantified by thioperylene-anhydride-S-to-imide-N ratios in X-ray photoelectron spectroscopy (XPS). Spectra demonstrated minimal residual reagent as determined by the absence of quantifiable phosphorus following sonication and rinsing. Photoelectrochemistry yielded an average | | = 840 ± 90 mV with the highest value of 952 mV under ELH-simulated AM1.5G illumination for chemical-bath-deposited SbS in the strongly oxidizing thianthrene redox couple when thioperylene-anhydride-tethered surfaces formed the back contact. SbS absorbers in which perylene anhydride, esters, thionoesters, and thiols form the back contact yielded significantly decreased | | magnitudes vs SbS on perylene-thioanhydride-terminated surfaces. We attribute the large to the combination of favorable sulfur-functionalized surfaces for deposition, charge transfer properties of the perylene layer, and use of the thianthrene redox couple.

摘要

共价连接的苝单分子层用作具有噻蒽正面整流接触的 SbS 光电化学电池的背接触。苝四羧酸二酐(PTCDA)与 Si(111) 的共价连接利用了表面连接胺处酸酐到酰亚胺的转化。对于 SbS 太阳能吸收体,我们推测由末端苝酸酐硫代形成的末端硫代苝酸酐,即 S=C-O-C=S,将作为一种柔软的、电子选择性和空穴阻挡背接触。我们探索了几种将表面连接的苝酸酐上的羰基转化为硫羰基的途径,包括劳森试剂(PS)和 PS - 吡啶配合物。在此,通过 X 射线光电子能谱(XPS)中硫代苝酸酐 - S 到酰亚胺 - N 的比率量化,甲苯中的 PS 产生了最高的转化率。光谱显示,在超声处理和冲洗后没有可量化的磷,这表明残留试剂最少。当硫代苝酸酐连接的表面形成背接触时,在强氧化的噻蒽氧化还原对中,对于化学浴沉积的 SbS,光电化学产生的平均 | | = 840 ± 90 mV,在 ELH 模拟的 AM1.5G 光照下最高值为 952 mV。与硫代苝酸酐封端表面上的 SbS 相比,其中苝酸酐、酯、硫代酯和硫醇形成背接触的 SbS 吸收体的 | | 幅度显著降低。我们将大的 归因于有利于沉积的硫官能化表面、苝层的电荷转移特性以及噻蒽氧化还原对的使用的综合作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7556/7364746/c68d599e72e1/ao0c02077_0001.jpg

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