Motaung Mathato P, Onwudiwe Damian C, Lei Wei
Material Science Innovation and Modelling (MaSIM) Research Focus Area, Faculty of Natural and Agricultural Science, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa.
Department of Chemistry, School of Physical and Chemical Sciences, Faculty of Natural and Agricultural Science, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa.
ACS Omega. 2021 Jul 13;6(29):18975-18987. doi: 10.1021/acsomega.1c02249. eCollection 2021 Jul 27.
BiS and SbS nanoparticles were prepared by microwave irradiation of single-source precursor complexes in the presence of ethylene glycol as a coordinating solvent. The as-synthesized nanoparticles were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) coupled with energy-dispersive X-ray (EDX), photoluminescence (PL), and UV-vis near-infrared (NIR) spectroscopy. Their electrochemical potential was examined in [Fe(CN)]/[Fe(CN)] by cyclic and square wave voltammetry (CV and SWV) and electrochemical impedance spectroscopy (EIS). GCEBiS and GCESbS exhibit promising electrochemical performance and a higher specific capacitance of about 700-800 F/g in [Fe(CN)]/[Fe(CN)]. Thin films of BiS and SbS were successfully incorporated in the fabrication of solar cell devices. The fabricated device using BiS (under 100 mW/cm) showed a power conversion efficiency (PCE) of 0.39%, with a of 0.96 V, a of 0.00228 mA/cm, and an FF of 44%. In addition, the device exhibits nonlinear current density-voltage characteristics, indicating that BiS was experiencing a Schottky contact. The SbS-based solar cell device showed no connection in the dark and under illumination. Therefore, no efficiency was recorded for the device using SbS, which indicated the ohmic nature of the film. This might be due to the current leakage caused by poor coverage. The nanoparticles were found to induce similar responses to the conventional semiconductor nanomaterials in relation to photoelectrochemistry. The present study indicates that BiS and SbS nanoparticles are promising semiconductor materials for developing optoelectronic and electrochemical devices as the films experience Schottky and Ohmic contacts.
通过在乙二醇作为配位溶剂存在的情况下对单源前驱体配合物进行微波辐照，制备了BiS和SbS纳米颗粒。通过X射线衍射（XRD）、透射电子显微镜（TEM）、扫描电子显微镜（SEM）结合能量色散X射线（EDX）、光致发光（PL）和紫外-可见近红外（NIR）光谱对合成的纳米颗粒进行了表征。通过循环伏安法和方波伏安法（CV和SWV）以及电化学阻抗谱（EIS）在[Fe(CN)]/[Fe(CN)]中检测了它们的电化学电位。GCEBiS和GCESbS在[Fe(CN)]/[Fe(CN)]中表现出有前景的电化学性能和约700 - 800 F/g的较高比电容。BiS和SbS薄膜成功地用于太阳能电池器件的制造。使用BiS制备的器件（在100 mW/cm²下）显示出功率转换效率（PCE）为0.39%，开路电压为0.96 V，短路电流密度为0.00228 mA/cm²，填充因子为44%。此外，该器件表现出非线性电流密度-电压特性，表明BiS经历了肖特基接触。基于SbS的太阳能电池器件在黑暗和光照下均无连接。因此，使用SbS的器件未记录到效率，这表明该薄膜具有欧姆性质。这可能是由于覆盖不良导致的电流泄漏。发现这些纳米颗粒在光电化学方面对传统半导体纳米材料产生类似的响应。本研究表明，BiS和SbS纳米颗粒是用于开发光电器件和电化学器件的有前景的半导体材料，因为这些薄膜经历了肖特基和欧姆接触。
