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单核苷酸多态性单层:一种具有高稳定性、载流子迁移率和磁性的新型二维材料。

SnP Monolayers: a New Type of Two-Dimensional Materials with High Stability, Carrier Mobility, and Magnetic Properties.

作者信息

Dou Yan-Mei, Zhang Chang-Wen, Li Ping, Wang Pei-Ji

机构信息

School of Physics and Technology, University of Jinan, Jinan, 250022, Shandong, People's Republic of China.

出版信息

Nanoscale Res Lett. 2020 Jul 29;15(1):155. doi: 10.1186/s11671-020-03383-0.

DOI:10.1186/s11671-020-03383-0
PMID:32728824
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7391462/
Abstract

Searching for two-dimensional (2D) group V materials with ferromagnetism, elastic anisotropy, and carrier mobility and tunable band structure is one key to developing constantly developing nanodevices. The 2D monolayers SnP with x/y (1/1, 1/2, 1/3, and so on) coordination number are studied based on the particle-swarm optimization technique combined with the density functional theory optimization. Its thermal stability can be confirmed by molecular dynamics at 70K and 300K, indicating that the novel 2D materials have a stable existence. The electronic band structures of four stable structures suggest that all the monolayers of SnP are fully adjustable and flexible tunable band gaps semiconductors under the biaxial strain. The monolayer of P[Formula: see text]m-SnP with unique valence band structure can go from nonmagnetic to ferromagnetic by the hole doping because of the "Stoner criterion," and Pmc2-SnP is a direct-like gap semiconductor with in-plane elastic anisotropy to possess a high electron mobility as high as 800 cmV s along the k direction, which is much higher than that of MoS (∼ 200 cmV s). The optical absorption peak of the material is in the ultraviolet region. These discoveries expand the potential applications of the emerging field of 2D SnP structures in nanoelectronics.

摘要

寻找具有铁磁性、弹性各向异性、载流子迁移率和可调带结构的二维(2D)第V族材料是不断发展纳米器件的关键之一。基于粒子群优化技术结合密度泛函理论优化,研究了具有x/y(1/1、1/2、1/3等)配位数的二维单层SnP。其热稳定性可通过70K和300K下的分子动力学得到证实,表明这种新型二维材料能够稳定存在。四种稳定结构的电子能带结构表明,在双轴应变下,所有SnP单层都是完全可调且具有灵活可调带隙的半导体。由于“斯托纳准则”,具有独特价带结构的单层P[公式:见正文]m - SnP通过空穴掺杂可从非磁性转变为铁磁性,并且Pmc2 - SnP是一种具有面内弹性各向异性的类直接带隙半导体,沿k方向具有高达800 cmV s的高电子迁移率,远高于MoS(约200 cmV s)。该材料的光吸收峰位于紫外区域。这些发现扩展了二维SnP结构在纳米电子学新兴领域的潜在应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e54d/7391462/d21e9a89170f/11671_2020_3383_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e54d/7391462/e15fe84a1b4b/11671_2020_3383_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e54d/7391462/fb089ab7e377/11671_2020_3383_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e54d/7391462/bf574c82a8e4/11671_2020_3383_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e54d/7391462/9eccd79d59ca/11671_2020_3383_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e54d/7391462/d21e9a89170f/11671_2020_3383_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e54d/7391462/e15fe84a1b4b/11671_2020_3383_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e54d/7391462/fb089ab7e377/11671_2020_3383_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e54d/7391462/bf574c82a8e4/11671_2020_3383_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e54d/7391462/9eccd79d59ca/11671_2020_3383_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e54d/7391462/d21e9a89170f/11671_2020_3383_Fig5_HTML.jpg

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