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气体退火对Ni/AlN/SiC电学性能的影响

Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC.

作者信息

Kim Dong-Hyeon, Schweitz Michael A, Koo Sang-Mo

机构信息

Department of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.

出版信息

Micromachines (Basel). 2021 Mar 8;12(3):283. doi: 10.3390/mi12030283.

DOI:10.3390/mi12030283
PMID:33800338
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7998277/
Abstract

It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.

摘要

这项工作表明，以Ni/AlN/SiC异质结器件形式存在的肖特基势垒二极管（SBD）在氮气和氧气气氛中退火会导致结构的电学性能显著改善。与未退火的器件相比，退火后的SBD器件的开/关比增加了约100倍。通过电流-电压（IV）表征得出的理想因子在退火后降低了约5.1倍，而势垒高度从约0.52 eV增加到0.71 eV。AlN层的键合结构通过X射线光电子能谱进行表征。对N 1s和O 1s峰的检测直接表明了元素最普遍的化学键合状态。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/be3f44a97af3/micromachines-12-00283-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/ab47d0457eb8/micromachines-12-00283-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/3d5a50759ac7/micromachines-12-00283-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/8ddbac014c1d/micromachines-12-00283-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/12ce7c707ba7/micromachines-12-00283-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/2548e8c8dce3/micromachines-12-00283-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/24de079e0428/micromachines-12-00283-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/803740596830/micromachines-12-00283-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/b36fe10c8a9d/micromachines-12-00283-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/be3f44a97af3/micromachines-12-00283-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/ab47d0457eb8/micromachines-12-00283-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/3d5a50759ac7/micromachines-12-00283-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/8ddbac014c1d/micromachines-12-00283-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/12ce7c707ba7/micromachines-12-00283-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/2548e8c8dce3/micromachines-12-00283-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/24de079e0428/micromachines-12-00283-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/803740596830/micromachines-12-00283-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/b36fe10c8a9d/micromachines-12-00283-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6491/7998277/be3f44a97af3/micromachines-12-00283-g009.jpg

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