Seong Dongjun, Lee Su Yeon, Seo Hyun Kyu, Kim Jong-Woo, Park Minsoo, Yang Min Kyu
Artificial Intelligence Convergence Research Lab, Sahmyook University, Seoul 01795, Republic of Korea.
Smith College of Liberal Arts, Sahmyook University, Seoul 01795, Republic of Korea.
Materials (Basel). 2023 Mar 2;16(5):2066. doi: 10.3390/ma16052066.
A new architecture has become necessary owing to the power consumption and latency problems of the von Neumann architecture. A neuromorphic memory system is a promising candidate for the new system as it has the potential to process large amounts of digital information. A crossbar array (CA), which consists of a selector and a resistor, is the basic building block for the new system. Despite the excellent prospects of crossbar arrays, the biggest obstacle for them is sneak current, which can cause a misreading between the adjacent memory cells, thus resulting in a misoperation in the arrays. The chalcogenide-based ovonic threshold switch (OTS) is a powerful selector with highly nonlinear characteristics that can be used to address the sneak current problem. In this study, we evaluated the electrical characteristics of an OTS with a TiN/GeTe/TiN structure. This device shows nonlinear DC characteristics, an excellent endurance of up to 10 in the burst read measurement, and a stable threshold voltage below 15 mV/dec. In addition, at temperatures below 300 °C, the device exhibits good thermal stability and retains an amorphous structure, which is a strong indication of the aforementioned electrical characteristics.
由于冯·诺依曼架构存在功耗和延迟问题，一种新架构变得必要。神经形态存储系统作为新系统的一个有前景的候选者，因为它有处理大量数字信息的潜力。由一个选择器和一个电阻器组成的交叉开关阵列（CA）是新系统的基本构建模块。尽管交叉开关阵列前景极佳，但其最大障碍是潜行电流，这会导致相邻存储单元之间的误读，从而在阵列中导致误操作。基于硫族化物的硫系阈值开关（OTS）是一种强大的选择器，具有高度非线性特性，可用于解决潜行电流问题。在本研究中，我们评估了具有TiN/GeTe/TiN结构的OTS的电学特性。该器件显示出非线性直流特性，在突发读取测量中具有高达10次的出色耐久性，以及低于15 mV/dec的稳定阈值电压。此外，在低于300°C的温度下，该器件表现出良好的热稳定性并保持非晶结构，这有力地表明了上述电学特性。
