Gan Kai-Jhih, Liu Po-Tsun, Ruan Dun-Bao, Hsu Chih-Chieh, Chiu Yu-Chuan, Sze Simon M
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C.
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C.
Nanotechnology. 2021 Jan 15;32(3):035203. doi: 10.1088/1361-6528/abbeab.
The characteristics of conductive-bridging random access memory (CBRAM) with amorphous indium-tungsten-zinc-oxide (a-InWZnO) switching layer and copper (Cu) ion-supply layer were prepared by sputtering. It was found that the doping ratio of tungsten has a significant effect on the memory characteristics of the CBRAM, and the doping of tungsten acts as a suppressor of oxygen vacancies in the InWZnO film. The O 1s binding energy associated with the oxygen-deficient regions in the α-InWZnO thin film decreases with increasing tungsten doping ratio, which can be demonstrated by x-ray photoelectron spectroscopy. When the tungsten doping ratio is 15%, the a-InWZnO CBRAM can achieve the excellent memory characteristics, such as high switching endurance (up to 9.7 × 10 cycling endurance), low operating voltage, and good retention capability. Moreover, the electrical uniformity and switching behavior of InWZnO device are evidently improved as the doping ratio of tungsten in the switching layer increases. These results suggest that CBRAM based on novel material InWZnO have great potential to be used in high-performance memory devices.
通过溅射制备了具有非晶铟钨锌氧化物（a-InWZnO）开关层和铜（Cu）离子供应层的导电桥接随机存取存储器（CBRAM）的特性。发现钨的掺杂比例对CBRAM的存储特性有显著影响，并且钨的掺杂起到了InWZnO薄膜中氧空位抑制剂的作用。α-InWZnO薄膜中与缺氧区域相关的O 1s结合能随着钨掺杂比例的增加而降低，这可以通过X射线光电子能谱来证明。当钨掺杂比例为15%时，a-InWZnO CBRAM可以实现优异的存储特性，如高开关耐久性（高达9.7×10次循环耐久性）、低工作电压和良好的保持能力。此外，随着开关层中钨掺杂比例的增加，InWZnO器件的电学均匀性和开关行为得到明显改善。这些结果表明，基于新型材料InWZnO的CBRAM在高性能存储器件中具有巨大的应用潜力。
