GaO-Based Optoelectronic Memristor and Memcapacitor Synapse for In-Memory Sensing and Computing Applications.

This study presents the fabrication and characterization of a dual-functional Pt/GaO/Pt optoelectronic synaptic device, capable of operating as both a memristor and a memcapacitor. We detail the optimized radio frequency (RF) sputtering parameters, including a base pressure of 8.7 × 10 Torr, RF power of 100 W, working pressure of 3 mTorr, and the use of high-purity GaO and Pt targets. These precisely controlled conditions facilitated the formation of an amorphous GaO thin film, as confirmed by XRD and AFM analyses, which demonstrated notable optical and electrical properties, including light absorption properties in the visible spectrum. The device demonstrated distinct resistive and capacitive switching behaviors, with memory characteristics highly dependent on the wavelength of the applied light. Ultraviolet (365 nm) exposure facilitated long-term memory retention, while visible light (660 nm) supported short-term memory behavior. Paired-pulse facilitation (PPF) measurements revealed that capacitance showed slower decay rates than EPSC, suggesting a more stable memory performance due to the dynamics of carrier trapping and detrapping at the insulator interface. Learning simulations further highlighted the efficiency of these devices, with improved memory retention upon repeated exposure to UV light pulses. Visual encoding simulations on a 3 × 3 pixel array also demonstrated effective multi-level memory storage using varying light intensities. These findings suggest that GaO-based memristor and memcapacitor devices have significant potential for neuromorphic applications, offering tunable memory performance across various wavelengths from ultraviolet to red.