Kumar Brajesh, Singh Satya Veer, Chattopadhyay Abhimanyu, Biring Sajal, Pal Bhola N
School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India.
Organic Electronics Research Center and Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan.
ACS Omega. 2020 Sep 30;5(40):25947-25953. doi: 10.1021/acsomega.0c03336. eCollection 2020 Oct 13.
A heavy-metal-free chalcopyrite (CuFeS) nanocrystal has been synthesized via microwave-assisted growth. Large-scale nanocrystals with an average particle size of 5 nm are fabricated by this technique within a very short period of time without any need for organic ligands. Scanning electron microscopy study (SEM) of individual synthesis steps indicates that aggregates of nanocrystals are formed as flakes during microwave-assisted synthesis. The colloidal solution of the CuFeS nanocrystal was prepared by sonicating these flakes. Transmission electron microscopy (TEM) study reveals the growth of sub-10 nm CuFeS nanocrystals that are further characterized by X-ray diffraction. UV-visible absorption spectroscopic study shows that the band gap of this nanocrystal is ∼1.3 eV. To investigate the photosensitive nature of this nanocrystal, a bilayer p-n heterojunction photodetector has been fabricated using this nontoxic CuFeS nanocrystal as a photoactive material and n-type ZnO as a charge-transport layer. The detectivity of this photodetector reaches above 10 Jones in visible and near-infrared (NIR) regions under 10 V external bias, which is significantly high for a nontoxic nanocrystal-based photodetector.
通过微波辅助生长合成了一种无重金属的黄铜矿(CuFeS)纳米晶体。利用该技术在非常短的时间内制备出平均粒径为5 nm的大规模纳米晶体,且无需任何有机配体。对各个合成步骤的扫描电子显微镜研究(SEM)表明,在微波辅助合成过程中,纳米晶体聚集体以薄片形式形成。通过超声处理这些薄片制备了CuFeS纳米晶体的胶体溶液。透射电子显微镜(TEM)研究揭示了亚10 nm的CuFeS纳米晶体的生长情况,并通过X射线衍射对其进行了进一步表征。紫外可见吸收光谱研究表明,该纳米晶体的带隙约为1.3 eV。为了研究该纳米晶体的光敏性质,使用这种无毒的CuFeS纳米晶体作为光活性材料,n型ZnO作为电荷传输层,制备了双层p-n异质结光电探测器。在10 V外部偏压下,该光电探测器在可见光和近红外(NIR)区域的探测率达到10 Jones以上,对于基于无毒纳米晶体的光电探测器来说,这一数值非常高。