Mendelson Noah, Chugh Dipankar, Reimers Jeffrey R, Cheng Tin S, Gottscholl Andreas, Long Hu, Mellor Christopher J, Zettl Alex, Dyakonov Vladimir, Beton Peter H, Novikov Sergei V, Jagadish Chennupati, Tan Hark Hoe, Ford Michael J, Toth Milos, Bradac Carlo, Aharonovich Igor
School of Mathematical and Physical Sciences, University of Technology Sydney, Sydney, New South Wales, Australia.
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory, Australia.
Nat Mater. 2021 Mar;20(3):321-328. doi: 10.1038/s41563-020-00850-y. Epub 2020 Nov 2.
Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN via various bottom-up synthesis methods and directly through ion implantation, we provide direct evidence that the visible SPEs are carbon related. Room-temperature optically detected magnetic resonance is demonstrated on ensembles of these defects. We perform ion-implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of the simplest 12 carbon-containing defect species suggest the negatively charged [Formula: see text] defect as a viable candidate and predict that out-of-plane deformations make the defect environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to the deterministic engineering of these defects for quantum photonic devices.
在过去几年中,六方氮化硼(hBN)中的单光子发射器(SPEs)因其优异的光学特性而受到越来越多的关注。然而,尽管有大量的实验结果和理论计算,但导致观察到的发射的缺陷结构仍然难以捉摸。在这里,通过各种自下而上的合成方法以及直接通过离子注入来控制杂质掺入hBN,我们提供了直接证据,证明可见光单光子发射器与碳有关。在这些缺陷的集合上展示了室温光学检测磁共振。我们进行了离子注入实验,并确认只有碳注入会在可见光谱范围内产生单光子发射器。对最简单的12种含碳缺陷物种的计算分析表明,带负电的[化学式:见原文]缺陷是一个可行的候选者,并预测面外变形会使该缺陷对环境敏感。我们的结果解决了关于hBN中可见范围内单发射器起源的长期争论,并且对于这些缺陷用于量子光子器件的确定性工程将是关键的。