Lee Kyoungtae, Scholey Jessica, Norman Eric B, Daftari Inder K, Mishra Kavita K, Faddegon Bruce A, Maharbiz Michel M, Anwar Mekhail
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720 USA.
Department of Radiation Oncology, University of California, San Francisco, CA 94143 USA.
IEEE J Solid-State Circuits. 2020 Nov;55(11):2947-2958. doi: 10.1109/jssc.2020.3024231. Epub 2020 Sep 23.
This paper presents a millimeter-scale CMOS 64×64 single charged particle radiation detector system for external beam cancer radiotherapy. A 1×1 m diode measures energy deposition by a single charged particle in the depletion region, and the array design provides a large detection area of 512×512 m. Instead of sensing the voltage drop caused by radiation, the proposed system measures the pulse width, i.e., the time it takes for the voltage to return to its baseline. This obviates the need for using power-hungry and large analog-to-digital converters. A prototype ASIC is fabricated in TSMC 65 nm LP CMOS process and consumes the average static power of 0.535 mW under 1.2 V analog and digital power supply. The functionality of the whole system is successfully verified in a clinical 67.5 MeV proton beam setting. To our' knowledge, this is the first work to demonstrate single charged particle detection for implantable dosimetry.
本文介绍了一种用于体外束流癌症放射治疗的毫米级CMOS 64×64单带电粒子辐射探测器系统。一个1×1μm的二极管测量单个带电粒子在耗尽区的能量沉积,阵列设计提供了512×512μm的大检测面积。所提出的系统不是检测由辐射引起的电压降,而是测量脉冲宽度,即电压恢复到其基线所需的时间。这消除了使用功耗大且体积大的模数转换器的需要。一个原型ASIC采用台积电65nm LP CMOS工艺制造,在1.2V模拟和数字电源下平均静态功耗为0.535mW。整个系统的功能在临床67.5MeV质子束设置中得到了成功验证。据我们所知,这是首次展示用于可植入剂量测定的单带电粒子检测的工作。