Xia Qiuying, Zhang Qinghua, Sun Shuo, Hussain Fiaz, Zhang Chunchen, Zhu Xiaohui, Meng Fanqi, Liu Kaiming, Geng Hao, Xu Jing, Zan Feng, Wang Peng, Gu Lin, Xia Hui
School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
Herbert Gleiter Institute of Nanoscience, Nanjing University of Science and Technology, Nanjing, 210094, China.
Adv Mater. 2021 Feb;33(5):e2003524. doi: 10.1002/adma.202003524. Epub 2020 Dec 18.
All-solid-state thin film lithium batteries (TFBs) are proposed as the ideal power sources for microelectronic devices. However, the high-temperature (>500 °C) annealing process of cathode films, such as LiCoO and LiMn O restricts the on-chip integration and potential applications of TFBs. Herein, tunnel structured Li MnO nanosheet arrays are fabricated as 3D cathode for TFBs by a facile electrolyte Li ion infusion method at very low temperature of 180 °C. Featuring an interesting tunnel intergrowth structure consisting of alternating 1 × 3 and 1 × 2 tunnels, the Li MnO cathode shows high specific capacity with good structural stability between 2.0 and 4.3 V (vs. Li /Li). By utilizing the 3D Li MnO cathode, all-solid-state Li MnO /LiPON/Li TFB (3DLMO-TFB) has been successfully constructed with prominent advantages of greatly enriched cathode/electrolyte interface and shortened Li diffusion length in the 3D structure. Consequently, the 3DLMO-TFB device exhibits large specific capacity (185 mAh g at 50 mA g ), good rate performance, and excellent cycle performance (81.3% capacity retention after 1000 cycles), outperforming the TFBs using spinel LiMn O thin film cathodes fabricated at high temperature. Importantly, the low-temperature preparation of high-performance cathode film enables the fabrication of TFBs on various rigid and flexible substrates, which could greatly expand their potential applications in microelectronics.
全固态薄膜锂电池(TFBs)被认为是微电子设备的理想电源。然而,诸如LiCoO和LiMnO等阴极薄膜的高温(>500°C)退火工艺限制了TFBs的片上集成和潜在应用。在此,通过一种简便的电解质锂离子注入法,在180°C的极低温度下制备了隧道结构的LiMnO纳米片阵列作为TFBs的三维阴极。LiMnO阴极具有由交替的1×3和1×2隧道组成的有趣的隧道共生结构,在2.0至4.3V(相对于Li/Li)之间表现出高比容量和良好的结构稳定性。通过使用三维LiMnO阴极,成功构建了全固态LiMnO/LiPON/Li TFB(3DLMO-TFB),其具有显著优势,即三维结构中阴极/电解质界面大大丰富,Li扩散长度缩短。因此,3DLMO-TFB器件表现出大比容量(50mA g时为185mAh g)、良好的倍率性能和优异的循环性能(1000次循环后容量保持率为81.3%),优于使用高温制备的尖晶石LiMn2O4薄膜阴极的TFBs。重要的是,高性能阴极薄膜的低温制备使得能够在各种刚性和柔性基板上制造TFBs,这可以极大地扩展它们在微电子领域的潜在应用。