Sun Yong-Lie, Zheng Xiang-Dong, Jevasuwan Wipakorn, Fukata Naoki
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan.
Nanomaterials (Basel). 2020 Dec 17;10(12):2535. doi: 10.3390/nano10122535.
Silicon nanotubes (SiNTs) have garnered a great deal of interest for both their synthesis and their potential for application to high-capacity energy storage, biosensors, and selective transport. In this study, we report a convenient and low-cost route to the fabrication of vertically aligned SiNTs via a wet-etching process that enables the control of the wall thickness of SiNTs by varying the gas flux and growth temperature. Transmission electron microscopy (TEM) characterization showed the resultant SiNTs to have an amorphous nature and a hexagonal hollow core. These SiNTs can be crystallized by thermal annealing.
硅纳米管（SiNTs）因其合成方法以及在高容量能量存储、生物传感器和选择性传输方面的应用潜力而备受关注。在本研究中，我们报告了一种通过湿蚀刻工艺制备垂直排列的硅纳米管的便捷且低成本的方法，该方法能够通过改变气体通量和生长温度来控制硅纳米管的壁厚。透射电子显微镜（TEM）表征显示，所得的硅纳米管具有非晶态性质和六边形空心结构。这些硅纳米管可以通过热退火实现结晶。
