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IMB-CNM的3D硅探测器技术中的可制造性和应力问题。

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM.

作者信息

Quirion David, Manna Maria, Hidalgo Salvador, Pellegrini Giulio

机构信息

Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain.

出版信息

Micromachines (Basel). 2020 Dec 18;11(12):1126. doi: 10.3390/mi11121126.

DOI:10.3390/mi11121126
PMID:33353092
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7766386/
Abstract

This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology.

摘要

本文概述了巴塞罗那微电子研究所（IMB-CNM）洁净室内开发的3D探测器制造技术。重点在于可制造性，特别是应力和弯曲问题。介绍了IMB-CNM为提高可制造性而提出的一些技术解决方案。还提及了其他研究机构的成果和解决方案。文中还与硅通孔技术进行了类比。本文旨在提示从研发工艺升级到成熟技术所实施的技术改进。

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