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一种具有高温韧性的单氯铜酞菁基忆阻器,可用于电子突触应用。

A Monochloro Copper Phthalocyanine Memristor with High-Temperature Resilience for Electronic Synapse Applications.

机构信息

Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, China.

Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, UK.

出版信息

Adv Mater. 2021 Feb;33(5):e2006201. doi: 10.1002/adma.202006201. Epub 2020 Dec 23.

DOI:10.1002/adma.202006201
PMID:33354801
Abstract

Memristors are considered to be one of the most promising device concepts for neuromorphic computing, in particular thanks to their highly tunable resistive states. To realize neuromorphic computing architectures, the assembly of large memristive crossbar arrays is necessary, but is often accompanied by severe heat dispassion. Organic materials can be tailored with on-demand electronic properties in the context of neuromorphic applications. However, such materials are more susceptible to heat, and detrimental effects such as thermally induced degradation directly lead to failure of device operation. Here, an organic memristive synapse formed of monochloro copper phthalocyanine, which remains operational and capable of memristive switching at temperatures as high as 300 °C in ambient air without any encapsulation, is demonstrated. The change in the electrical conductance is found to be a result of ion movement, closely resembling what takes place in biological neurons. Furthermore, the high viability of this approach is showcased by demonstrating flexible memristors with stable switching behaviors after repeated mechanical bending as well as organic synapses capable of emulating a trainable and reconfigurable memristor array for image information processing. The results set a precedent for thermally resilient organic synapses to impact organic neuromorphic devices in progressing their practicality.

摘要

忆阻器被认为是最有前途的神经形态计算器件概念之一,特别是由于其高度可调的电阻状态。为了实现神经形态计算架构,有必要组装大型忆阻器交叉阵列,但这通常伴随着严重的散热问题。在神经形态应用的背景下,有机材料可以定制具有按需电子特性。然而,这些材料更容易受到热量的影响,热诱导降解等有害影响会直接导致器件操作失效。在这里,展示了一种由一氯铜酞菁组成的有机忆阻器突触,它在没有任何封装的情况下,在高达 300°C 的环境空气中仍然可以工作,并能够进行忆阻开关。发现电导率的变化是离子运动的结果,这与生物神经元中发生的情况非常相似。此外,通过展示具有稳定开关行为的柔性忆阻器,以及能够模拟可训练和可重构忆阻器阵列的有机突触,证明了这种方法具有很高的可行性,这些突触可用于图像信息处理。这些结果为耐热有机突触在推进其实际应用方面对有机神经形态器件产生影响奠定了先例。

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