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戒除习惯/无隔离器的半导体激光器

Kicking the habit/semiconductor lasers without isolators.

作者信息

Harfouche Mark, Kim Dongwan, Wang Huolei, Santis Christos T, Zhang Zhewei, Chen Hetuo, Satyan Naresh, Rakuljic George, Yariv Amnon

出版信息

Opt Express. 2020 Nov 23;28(24):36466-36475. doi: 10.1364/OE.411816.

Abstract

In this paper, we propose and demonstrate a solution to the problem of coherence degradation and collapse caused by the back reflection of laser power into the laser resonator. The problem is most onerous in semiconductor lasers (SCLs), which are normally coupled to optical fibers, and results in the fact that practically every commercial SCL has appended to it a Faraday-effect isolator that blocks most of the reflected optical power preventing it from entering the laser resonator. The isolator assembly is many times greater in volume and cost than the SCL itself. This problem has resisted a practical and economic solution despite decades of effort and remains the main obstacle to the emergence of a CMOS-compatible photonic integrated circuit technology. A simple solution to the problem is thus of major economic and technological importance. We propose a strategy aimed at weaning semiconductor lasers from their dependence on external isolators. Lasers with large internal Q-factors can tolerate large reflections, limited only by the achievable Q values, without coherence collapse. A laser design is demonstrated on the heterogeneous Si/III-V platform that can withstand 25 dB higher reflected power compared to commercial DFB lasers. Larger values of internal Qs, achievable by employing resonator material of lower losses and improved optical design, should further increase the isolation margin and thus obviate the need for isolators altogether.

摘要

在本文中,我们提出并演示了一种解决激光功率背向反射进入激光谐振器所导致的相干性退化和崩溃问题的方案。该问题在通常与光纤耦合的半导体激光器(SCL)中最为严重,其结果是几乎每一台商用SCL都附加了一个法拉第效应隔离器,该隔离器可阻挡大部分反射光功率,防止其进入激光谐振器。隔离器组件的体积和成本比SCL本身大很多倍。尽管经过数十年的努力,这个问题仍然没有得到切实可行且经济的解决方案,并且仍然是CMOS兼容光子集成电路技术出现的主要障碍。因此,一个简单的解决方案具有重大的经济和技术意义。我们提出了一种策略,旨在使半导体激光器摆脱对外部隔离器的依赖。具有大内Q因子的激光器能够容忍较大的反射,仅受可实现的Q值限制,而不会出现相干性崩溃。在异质Si/III-V平台上展示了一种激光设计,与商用分布反馈(DFB)激光器相比,它能够承受高25 dB的反射功率。通过采用低损耗的谐振器材料和改进的光学设计可实现更大的内Q值,这应能进一步提高隔离裕度,从而完全无需隔离器。

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