Son Woo-Young, Moon Jeong Hyun, Bahng Wook, Koo Sang-Mo
Department of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea.
Power Semiconductor Research Center, Korea Electrotechnology Research Institute, Changwon 51543, Republic of Korea.
J Nanosci Nanotechnol. 2021 Mar 1;21(3):1904-1908. doi: 10.1166/jnn.2021.18906.
We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples, the changes of the carbon vacancy () related defect characteristics were analyzed by deep level transient spectroscopy. The trap energy associated with double negative acceptor ((2-/0)) appears at ˜0.7 eV and was reduced from ˜0.687 to ˜0.582 eV in the sacrificial AlN layer samples. In addition, the capture cross section was significantly improved from ˜2.1×10-14 to ˜3.8×10 cm and the trap concentration was reduced by approximately 40 times.
我们研究了牺牲性AlN层对4H-SiC表面深能级态的影响。使用管式炉将有和没有AlN层的样品在1300℃下退火30分钟。退火后，通过深能级瞬态谱分析与碳空位（）相关的缺陷特性的变化。与双负受主（(2-/0)）相关的陷阱能量出现在约0.7eV处，在牺牲性AlN层样品中从约0.687eV降低到约0.582eV。此外，俘获截面从约2.1×10-14显著提高到约3.8×10 cm，陷阱浓度降低了约40倍。
