Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden.
Phys Rev Lett. 2012 Nov 2;109(18):187603. doi: 10.1103/PhysRevLett.109.187603. Epub 2012 Oct 31.
Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V(C)) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC--the Z(1/2) lifetime-limiting defect and the EH(7) deep defect--are related to the double acceptor (2-|0) and single donor (0|+) levels of V(C), respectively.
利用电子顺磁共振（EPR），确定了 4H-SiC 中碳空位（V(C)）的能级及其负-U 特性。通过 EPR 和深能级瞬态光谱相结合，我们表明，在生长的 4H-SiC 中两种最常见的缺陷——Z(1/2)寿命限制缺陷和 EH(7)深缺陷——分别与 V(C)的双受主（2-|0）和单施主（0|+）能级有关。
